- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359059 > M36WT864T10ZA6T (意法半導(dǎo)體) 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product PDF資料下載
參數(shù)資料
| 型號(hào)： | M36WT864T10ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 69/92頁 |
| 文件大?。?/td> | 624K |
| 代理商： | M36WT864T10ZA6T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁當(dāng)前第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁
69/92
M36WT864TF, M36WT864BF
APPENDIX B. FLASH COMMON FLASH INTERFACE
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
When the Read CFI Query Command is issued
the device enters CFI Query mode and the data
structure is read from the memory. Tables 34, 35,
36, 37, 38, 40 and 1 show the addresses used to
retrieve the data. The Query data is always pre-
sented on the lowest order data outputs (DQ0-
DQ7), the other outputs (DQ8-DQ15) are set to 0.
The CFI data structure also contains a security
area where a 64 bit unique security number is writ-
ten (see Table 1, Security Code area). This area
can be accessed only in Read mode by the final
user. It is impossible to change the security num-
ber after it has been written by ST. Issue a Read
Array command to return to Read mode.
Table 34. Query Structure Overview
Offset
Note: The Flash memory display the CFI data structure when CFI Query command is issued. In this table are listed the main sub-sections
detailed in Tables 35, 36, 37, 38, 40 and 1. Query data is always presented on the lowest order data outputs.
Table 35. CFI Query Identification String
Offset
Sub-section Name
00h
0020h
8810h
8811h
02h
reserved
03h
reserved
04h-0Fh
reserved
10h
0051h
11h
0052h
12h
0059h
13h
0003h
14h
0000h
15h
offset = P = 0039h
16h
0000h
17h
0000h
18h
0000h
19h
value = A = 0000h
1Ah
0000h
Sub-section Name
Description
00h
Reserved
Reserved for algorithm-specific information
10h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
System Interface Information
Device timing & voltage information
27h
Device Geometry Definition
Flash device layout
P
Primary Algorithm-specific Extended Query table
Additional information specific to the Primary
Algorithm (optional)
A
Alternate Algorithm-specific Extended Query table
Additional information specific to the Alternate
Algorithm (optional)
80h
Security Code Area
Lock Protection Register
Unique device Number and
User Programmable OTP
Description
Value
ST
Top
Bottom
Manufacturer Code
01h
Device Code
Reserved
Reserved
Reserved
Query Unique ASCII String "QRY"
"Q"
"R"
"Y"
Primary Algorithm Command Set and Control Interface ID code 16
bit ID code defining a specific algorithm
Address for Primary Algorithm extended Query table (see Table 37)
p = 39h
Alternate Vendor Command Set and Control Interface ID Code
second vendor - specified algorithm supported
NA
Address for Alternate Algorithm extended Query table
NA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36WT864TF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B85ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T70ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TFZA | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BFZA | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864T70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TF70ZA6T | 功能描述:組合存儲(chǔ)器 64M (4Mx16) 70ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| M36WT864TFZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。