參數(shù)資料
型號(hào)： M36WT864B10ZA6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述： 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多
文件頁(yè)數(shù)： 60/92頁(yè)
文件大小： 624K
代理商： M36WT864B10ZA6T
M36WT864TF, M36WT864BF
60/92
Table 27. SRAM Write AC Characteristics
Note: 1. At any given temperature and voltage condition, t
WLQZ
is less than t
WHQX
for any given device.
2. These parameters are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. Tested initially and after any design or process changes that may affect these parameters.
Symbol
Parameter
M36WT864TF/BF
Unit
70
t
AVAV
Write Cycle Time
Min
70
ns
t
AVBH
Address Valid to LBS, UBS High
Min
60
ns
t
AVBL
Address Valid to LBS, UBS Low
Min
0
ns
t
AVEH
Address Valid to Chip Enable High
Min
60
ns
t
AVEL
Address valid to Chip Enable Low
Min
0
ns
t
AVWH
Address Valid to Write Enable High
Min
60
ns
t
AVWL
Address Valid to Write Enable Low
Min
0
ns
t
BHAX
LBS, UBS High to Address Transition
Min
0
ns
t
BHDX
LBS, UBS High to Input Transition
Min
0
ns
t
BLBH
LBS, UBS Low to LBS, UBS High
Min
60
ns
t
BLEH
LBS, UBS Low to Chip Enable High
Min
60
ns
t
BLWH
LBS, UBS Low to Write Enable High
Min
60
ns
t
DVBH
Input Valid to LBS, UBS High
Min
30
ns
t
DVEH
Input Valid to Chip Enable High
Min
30
ns
t
DVWH
Input Valid to Write Enable High
Min
30
ns
t
EHAX
Chip Enable High to Address Transition
Min
0
ns
t
EHDX
Chip enable High to Input Transition
Min
0
ns
t
ELBH
Chip Enable Low to LBS, UBS High
Min
60
ns
t
ELEH
Chip Enable Low to Chip Enable High
Min
60
ns
t
ELWH
Chip Enable Low to Write Enable High
Min
60
ns
t
WHAX
Write Enable High to Address Transition
Min
0
ns
t
WHDX
Write Enable High to Input Transition
Min
0
ns
t
WHQX (1)
Write Enable High to Output Transition
Min
5
ns
t
WLBH
Write Enable Low to LBS, UBS High
Min
60
ns
t
WLEH
Write Enable Low to Chip Enable High
Min
60
ns
t
WLQZ (1,2,3)
Write Enable Low to Output Hi-Z
Max
20
ns
t
WLWH
Write Enable Low to Write Enable High
Min
50
ns
相關(guān)PDF資料
PDF描述
M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T10ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864B85ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T70ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36WT864B70ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864B85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BFZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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