參數(shù)資料
型號(hào)： M36WT864B10ZA6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述： 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多
文件頁(yè)數(shù)： 54/92頁(yè)
文件大?。?/td> 624K
代理商： M36WT864B10ZA6T
M36WT864TF, M36WT864BF
54/92
Table 24. Flash Write AC Characteristics, Chip Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. t
WHEL
has the values shown when reading in the targeted bank. System designers should take this into account and may insert a
software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a
different bank t
WHEL
is 0ns.
3. To be characterized.
Symbol
Alt
Parameter
M36WT864TF/BF
Unit
70
85
100
C
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
70
(3)
85
100
ns
t
AVEH
t
WC
Address Valid to Chip Enable High
Min
45
(3)
50
50
ns
t
AVLH
Address Valid to Latch Enable High
Min
10
10
10
ns
t
DVEH
t
DS
Data Valid to Write Enable High
Min
45
(3)
50
50
ns
t
EHAX
t
AH
Chip Enable High to Address Transition
Min
0
0
0
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
Min
0
0
0
ns
t
EHEL
t
WPH
Chip Enable High to Chip Enable Low
Min
25
25
25
ns
t
EHGL
Chip Enable High to Output Enable Low
Min
0
0
0
ns
t
EHWH
t
CH
Chip Enable High to Write Enable High
Min
0
0
0
ns
t
ELKV
Chip Enable Low to Clock Valid
Min
9
9
9
ns
t
ELEH
t
WP
Chip Enable Low to Chip Enable High
Min
45
(3)
50
50
ns
t
ELLH
Chip Enable Low to Latch Enable High
Min
10
10
10
ns
t
ELQV
Chip Enable Low to Output Valid
Min
70
(3)
85
100
ns
t
GHEL
Output Enable High to Chip Enable Low
Min
20
20
20
ns
t
LHAX
Latch Enable High to Address Transition
Min
10
10
10
ns
t
LLLH
Latch Enable Pulse Width
Min
10
10
10
ns
t
WHEL(2)
Write Enable High to Chip Enable Low
Min
25
(3)
25
25
ns
t
WHQV
Write Enable High to Output Valid
Min
95
110
125
ns
t
WLEL
t
CS
Write Enable Low to Chip Enable Low
Min
0
0
0
ns
P
t
EHVPL
Chip Enable High to V
PPF
Low
Min
200
200
200
ns
t
EHWPL
Chip Enable High to Write Protect Low
Min
200
200
200
ns
t
QVVPL
Output (Status Register) Valid to V
PPF
Low
Min
0
0
0
ns
t
QVWPL
Output (Status Register) Valid to Write Protect
Low
Min
0
0
0
ns
t
VPHEH
t
VPS
V
PPF
High to Chip Enable High
Min
200
200
200
ns
t
WPHEH
Write Protect High to Chip Enable High
Min
200
200
200
ns
相關(guān)PDF資料
PDF描述
M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T10ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864B85ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T70ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36WT864B70ZA6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864B85ZA6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BF 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BFZA 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T10ZA6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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