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參數(shù)資料
| 型號： | M36WT864B10ZA6T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 1/92頁 |
| 文件大?。?/td> | 624K |
| 代理商： | M36WT864B10ZA6T |
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PRODUCT PREVIEW
July 2002
This is preliminary information on a new product now in development. Details are subject to change without notice.
M36WT864TF
M36WT864BF
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory
and 8 Mbit (512K x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
DDF
= 1.65V to 2.2V
– V
DDS
= V
DDQF
= 2.7V to 3.3V
– V
PPF
= 12V for Fast Program (optional)
I
ACCESS TIME: 70, 85, 100ns
I
LOW POWER CONSUMPTION
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36WT864TF: 8810h
– Bottom Device Code, M36WT864BF: 8811h
FLASH MEMORY
I
PROGRAMMING TIME
– 8μs by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
I
MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
I
DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write operations
I
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
I
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
I
COMMON FLASH INTERFACE (CFI)
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
SRAM
I
8 Mbit (512K x 16 bit)
I
EQUAL CYCLE and ACCESS TIMES: 70ns
I
LOW STANDBY CURRENT
I
LOW V
DDS
DATA RETENTION: 1.5V
I
TRI-STATE COMMON I/O
I
AUTOMATIC POWER DOWN
Figure 1. Packages
FBGA
Stacked LFBGA96 (ZA)
8 x 14mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36WT864BF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B85ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T70ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864B70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BFZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
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