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參數(shù)資料
| 型號： | M36WT864B10ZA6T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內存產品多 |
| 文件頁數(shù)： | 23/92頁 |
| 文件大?。?/td> | 624K |
| 代理商： | M36WT864B10ZA6T |
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M36WT864TF, M36WT864BF
COMMAND INTERFACE - FACTORY PROGRAM COMMANDS
The Factory Program commands are used to
speed up programming. They require V
PPF
to be at
V
PPH
. Refer to Table 7, Factory Program Com-
mands, in conjunction with the following text de-
scriptions.
Double Word Program Command
The Double Word Program command improves
the programming throughput by writing a page of
two adjacent words in parallel. The two words
must differ only for the address A0.
Programming should not be attempted when V
PPF
is not at V
PPH
. The command can be executed if
V
PPF
is below V
PPH
but the result is not guaran-
teed.
Three bus write cycles are necessary to issue the
Double Word Program command.
I
The first bus cycle sets up the Double Word
Program Command.
I
The second bus cycle latches the Address and
the Data of the first word to be written.
I
The third bus cycle latches the Address and the
Data of the second word to be written and starts
the Program/Erase Controller.
Read operations in the bank being programmed
output the Status Register content after the pro-
gramming has started.
During Double Word Program operations the bank
being programmed will only accept the Read Ar-
ray, Read Status Register, Read Electronic Signa-
ture and Read CFI Query command, all other
commands will be ignored. Dual operations are
not supported during Double Word Program oper-
ations and it is not recommended to suspend a
Double Word Program operation. Typical Program
times are given in Table 14, Program, Erase
Times and Program/Erase Endurance Cycles.
Programming aborts if Reset goes to V
IL
. As data
integrity cannot be guaranteed when the program
operation is aborted, the memory locations must
be reprogrammed.
See Appendix C, Figure 29, Double Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using the Double Word Program
command.
Quadruple Word Program Command
The Quadruple Word Program command im-
proves the programming throughput by writing a
page of four adjacent words in parallel. The four
words must differ only for the addresses A0 and
A1.
Programming should not be attempted when V
PPF
is not at V
PPH
. The command can be executed if
V
PPF
is below V
PPH
but the result is not guaran-
teed.
Five bus write cycles are necessary to issue the
Quadruple Word Program command.
I
The first bus cycle sets up the Double Word
Program Command.
I
The second bus cycle latches the Address and
the Data of the first word to be written.
I
The third bus cycle latches the Address and the
Data of the second word to be written.
I
The fourth bus cycle latches the Address and
the Data of the third word to be written.
I
The fifth bus cycle latches the Address and the
Data of the fourth word to be written and starts
the Program/Erase Controller.
Read operations to the bank being programmed
output the Status Register content after the pro-
gramming has started.
Programming aborts if Reset goes to V
IL
. As data
integrity cannot be guaranteed when the program
operation is aborted, the memory locations must
be reprogrammed.
During Quadruple Word Program operations the
bank being programmed will only accept the Read
Array, Read Status Register, Read Electronic Sig-
nature and Read CFI Query command, all other
commands will be ignored.
Dual operations are not supported during Quadru-
ple Word Program operations and it is not recom-
mended to suspend a Quadruple Word Program
operation. Typical Program times are given in Ta-
ble 14, Program, Erase Times and Program/Erase
Endurance Cycles.
See Appendix C, Figure 30, Quadruple Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using the Quadruple Word Program
command.
Enhanced Factory Program Command
The Enhanced Factory Program command can be
used to program large streams of data within any
one block. It greatly reduces the total program-
ming time when a large number of Words are writ-
ten to a block at any one time.
The use of the Enhanced Factory Program com-
mand requires certain operating conditions.
I
V
PPF
must be set to V
PPH
I
V
DD
must be within operating range
I
Ambient temperature, T
A
must be 25°C ± 5°C
I
The targeted block must be unlocked
Dual operations are not supported during the En-
hanced Factory Program operation and the com-
mand cannot be suspended.
For optimum performance the Enhanced Factory
Program commands should be limited to a maxi-
mum of 10 program/erase cycles per block. If this
相關PDF資料 |
PDF描述 |
|---|---|
| M36WT864BF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B85ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T70ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864B70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BFZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
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