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參數(shù)資料
| 型號： | M36WT864B10ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 57/92頁 |
| 文件大?。?/td> | 624K |
| 代理商： | M36WT864B10ZA6T |
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M36WT864TF, M36WT864BF
Figure 21. SRAM Chip Enable or UBS/LBS Controlled, Standby AC Waveforms
Table 26. SRAM Read and Standby AC Characteristics
Note: 1. Test conditions assume transition timing reference level = 0.3V
DDS
or 0.7V
DDS
.
2. At any given temperature and voltage condition, t
GHQZ
is less than t
GLQX
, t
BHQZ
is less than t
BLQX
and t
EHQZ
is less than t
ELQX
for
any given device.
3. These parameters are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
4. Tested initially and after any design or process changes that may affect these parameters.
Symbol
Parameter
M36WT864TF/BF
Unit
70
t
AVAV
Read Cycle Time
Min
70
ns
t
AVQV
Address Valid to Output Valid
Max
70
ns
t
AXQX (1)
Data hold from address change
Min
5
ns
t
BHQZ(2,3,4)
Upper/Lower Byte Enable High to Output Hi-Z
Max
25
ns
t
BLQV
Upper/Lower Byte Enable Low to Output Valid
Max
70
ns
t
BLQX (1)
Upper/Lower Byte Enable Low to Output Transition
Min
5
ns
t
EHQZ(2,3,4)
Chip Enable High to Output Hi-Z
Max
25
ns
t
ELQV
Chip Enable Low to Output Valid
Max
70
ns
t
ELQX (1)
Chip Enable Low to Output Transition
Min
5
ns
t
GHQZ (2,3,4)
Output Enable High to Output Hi-Z
Max
25
ns
t
GLQV
Output Enable Low to Output Valid
Max
35
ns
t
GLQX (1)
Output Enable Low to Output Transition
Min
5
ns
t
PD (4)
Chip Enable or UB/LB High to Power Down
Max
0
ns
t
PU (4)
Chip Enable or UB/LB Low to Power Up
Min
70
ns
AI06283
tPD
IDD
tPU
ISB
50%
E1S, UBS, LBS
E2S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36WT864BF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B85ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T70ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864B70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864BFZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
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