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參數(shù)資料
| 型號： | M36W832BE85ZA1S |
| 廠商： | NUMONYX |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA66 |
| 封裝： | 12 X 8 MM, 0.80 MM PITCH, LFBGA-66 |
| 文件頁數(shù)： | 3/64頁 |
| 文件大?。?/td> | 897K |
| 代理商： | M36W832BE85ZA1S |
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11/64
M36W832TE, M36W832BE
Flash Memory Component
The Flash Memory is a 32 Mbit (2 Mbit x 16) device
that can be erased electrically at block level and
programmed in-system on a Word-by-Word basis.
These operations can be performed using a single
low voltage (2.7 to 3.6V) supply. VDDQF allows to
drive the I/O pin down to 1.65V. An optional 12V
VPPF power supply is provided to speed up cus-
tomer programming.
The device features an asymmetrical blocked ar-
chitecture with an array of 71 blocks: 8 Parameter
Blocks of 4 KWords and 63 Main Blocks of 32
KWords. The M36W832TE has the Parameter
Blocks at the top of the memory address space
while the M36W832BE locates the Parameter
Blocks starting from the bottom. The memory
maps are shown in Figure 5, Block Addresses.
The Flash Memory features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
When VPPF ≤ VPPLK all blocks are protected
against program or erase. All blocks are locked at
Power Up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
The device includes a Protection Register to in-
crease the protection of a system design. The Pro-
tection Register is divided into two segments, the
first is a 64 bit area which contains a unique device
number written by ST, while the second is a 128 bit
area, one-time-programmable by the user. The
user programmable segment can be permanently
protected. Figure 6, shows the Flash Security
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
Figure 5. Flash Block Addresses
AI90164
4 KWords
1FFFFF
1FF000
32 KWords
00FFFF
008000
32 KWords
007FFF
000000
Top Boot Block Addresses
4 KWords
1F8FFF
1F8000
32 KWords
1F0000
1F7FFF
Total of 8
4 KWord Blocks
Total of 63
32 KWord Blocks
4 KWords
1FFFFF
1F8000
32 KWords
000FFF
000000
Bottom Boot Block Addresses
4 KWords
1F7FFF
00FFFF
32 KWords
1F0000
008000
Total of 63
32 KWord Blocks
Total of 8
4 KWord Blocks
007FFF
007000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W832BE85ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832BE85ZA6S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832BE85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832BEZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
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