參數(shù)資料
型號(hào)： M36W832BE85ZA1S
廠商： NUMONYX
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA66
封裝： 12 X 8 MM, 0.80 MM PITCH, LFBGA-66
文件頁(yè)數(shù)： 21/64頁(yè)
文件大?。?/td> 897K
代理商： M36W832BE85ZA1S
M36W832TE, M36W832BE
28/64
Table 15. DC Characteristics
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
Flash &
SRAM
0V
≤ VIN ≤ VDDQF
±2
A
ILO
Output Leakage Current
Flash
0V
≤ VOUT ≤ VDDQF,
±10
A
SRAM
0V
≤ VOUT ≤ VDDQF,
SRAM Outputs Hi-Z
±1
A
IDDS
VDD Standby Current
Flash
EF = VDDQF ± 0.2V
VDDQF = VDDF max
15
50
A
SRAM
E1S
≥ VDDS – 0.3V
or E2S
≤ 0.3V
VIN ≥ VDDS – 0.3V or VIN ≤ 0.3V
f = fmax (Address and Data
inputs only)
f = 0 (GS, WS, UBS and LBS)
825
A
E1S
≥ VDDS – 0.3V
or E2S
≤ 0.3V
VIN ≥ VDDS – 0.3V or VIN ≤ 0.3V
f = 0, VDDS = VDDS max
825
A
IDDD
Supply Current
(Reset)
Flash
RPF = VSSF ± 0.2V
15
50
A
IDD
Supply Current
SRAM
VOUT = 0mA
f = fmax = 1/tAVAV, CMOS levels
VDDS = VDDS max
715
mA
IOUT = 0 mA, f = 1MHz, CMOS
Levels
12
mA
IDDR
Supply Current
(Read)
Flash
EF = VIL, GF = VIH, f = 5 MHz
918
mA
IDDW
Supply Current
(Program)
Flash
Program in progress
VPPF = 12V ± 5%
510
mA
Program in progress
VPPF = VDDF
10
20
mA
IDDE
Supply Current
(Erase)
Flash
Erase in progress
VPPF = 12V ± 5%
520
mA
Erase in progress
VPPF = VDDF
10
20
mA
IDDES
Supply Current
(Program/Erase
Suspend)
Flash
EF = VDDQF ± 0.2V,
Erase suspended
15
50
A
IPP
Program Current
(Read or Standby)
Flash
VPPF > VDDF
400
A
IPP1
VPPF ≤ VDDF
15
A
IPP2
Program Current
(Reset)
Flash
RPF = VSSF ± 0.2V
15
A
IPPW
Program Current
(Program)
Flash
Program in progress
VPPF = 12V ± 5%
110
mA
Program in progress
VPPF = VDDF
15
A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36W832BE85ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832BE85ZA6S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832BE85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832BEZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
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