參數(shù)資料
型號: M36W832BE85ZA1S
廠商: NUMONYX
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 12 X 8 MM, 0.80 MM PITCH, LFBGA-66
文件頁數(shù): 24/64頁
文件大?。?/td> 897K
代理商: M36W832BE85ZA1S
M36W832TE, M36W832BE
30/64
Figure 10. Flash Read Mode AC Waveforms
Table 16. Flash Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
2. GF may be delayed by up to tELQV - tGLQV after the falling edge of EF without increasing tELQV.
Symbol
Alt
Parameter
Flash Device
Unit
70
85
tAVAV
tRC
Address Valid to Next Address Valid
Min
70
85
ns
tAVQV
tACC
Address Valid to Output Valid
Max
70
85
ns
tAXQX
(1)
tOH
Address Transition to Output Transition
Min
0
ns
tEHQX
(1)
tOH
Chip Enable High to Output Transition
Min
0
ns
tEHQZ
(1)
tHZ
Chip Enable High to Output Hi-Z
Max
20
ns
tELQV
(2)
tCE
Chip Enable Low to Output Valid
Max
70
85
ns
tELQX
(1)
tLZ
Chip Enable Low to Output Transition
Min
0
ns
tGHQX
(1)
tOH
Output Enable High to Output Transition
Min
0
ns
tGHQZ
(1)
tDF
Output Enable High to Output Hi-Z
Max
20
ns
tGLQV
(2)
tOE
Output Enable Low to Output Valid
Max
20
ns
tGLQX
(1)
tOLZ
Output Enable Low to Output Transition
Min
0
ns
DQ0-DQ15
AI90168b
A0-A20
EF
GF
VALID
tAXQX
tAVAV
VALID
tAVQV
tELQV
tELQX
tGLQV
tGLQX
ADDR. VALID
CHIP ENABLE
OUTPUTS
ENABLED
DATA VALID
STANDBY
tGHQX
tGHQZ
tEHQX
tEHQZ
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