- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359059 > M36W432BG85ZA6T (意法半導(dǎo)體) 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product PDF資料下載
參數(shù)資料
| 型號(hào)： | M36W432BG85ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，開機(jī)區(qū)塊快閃記憶體和4兆位的256Kb x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品 |
| 文件頁(yè)數(shù)： | 45/57頁(yè) |
| 文件大?。?/td> | 418K |
| 代理商： | M36W432BG85ZA6T |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)當(dāng)前第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)
45/57
M36W432T, M36W432B
Table 30. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0027h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
0036h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
00B4h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
11.4V
1Eh
00C6h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12.6V
1Fh
0004h
Typical timeout per single word program = 2
n
μs
16μs
20h
0004h
Typical timeout for Double Word Program = 2
n
μs
16μs
21h
000Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
0000h
Typical timeout for full chip erase = 2
n
ms
NA
23h
0005h
Maximum timeout for word program = 2
n
times typical
512μs
24h
0005h
Maximum timeout for Double Word Program = 2
n
times typical
512μs
25h
0003h
Maximum timeout per individual block erase = 2
n
times typical
8s
26h
0000h
Maximum timeout for chip erase = 2
n
times typical
NA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W832BE | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te85ZA1S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Be85ZA1S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te85ZA1T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TEZA | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W432BGZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36W432BZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36W432T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36W432T70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36W432T70ZA6T | 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。