參數(shù)資料
型號(hào)： M36W432BG85ZA6T
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，開(kāi)機(jī)區(qū)塊快閃記憶體和4兆位的256Kb x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù)： 23/57頁(yè)
文件大?。?/td> 418K
代理商： M36W432BG85ZA6T
23/57
M36W432T, M36W432B
Table 14. DC Characteristics
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
Flash &
SRAM
0V
≤
V
IN
≤
V
DDQF
±2
μA
I
LO
Output Leakage Current
Flash &
SRAM
0V
≤
V
OUT
≤
V
DDQF,
SRAM Outputs Hi-Z
±10
μA
I
DDS
V
DD
Standby Current
Flash
EF = V
DDQF
± 0.2V
V
DDQF
= V
DDF
max
15
50
μA
SRAM
E1S = E2S
≥
V
DDS
– 0.2V
or E2S
≤
0.2V
20
50
μA
I
DDD
Supply Current (Reset)
Flash
RPF = V
SSF
± 0.2V
15
50
μA
I
DD
Supply Current
SRAM
V
IN
≤
V
DDS
– 0.2V
or V
IN
≤
0.2V
I
IO
= 0 mA, cycle time = 1μs
1
2
mA
V
IN
≤
V
DDS
– 0.2V
or V
IN
≤
0.2V
I
IO
= 0 mA, min cycle time
7
12
mA
I
DDR
Supply Current (Read)
Flash
EF = V
IL
, GF = V
IH,
f = 5 MHz
10
20
mA
I
DDW
Supply Current (Program)
Flash
Program in progress
10
20
mA
I
DDE
Supply Current (Erase)
Flash
Erase in progress
5
20
mA
I
DDES
Supply Current
(Erase Suspend)
Flash
Erase Suspend in progress
50
μA
I
DDWS
Supply Current
(ProgramSuspend)
Flash
Program Suspend in progress
50
μA
I
PPS
Program Current
(Standby)
Flash
V
PPF
≤
V
DDQF
0.2
5
μA
V
PPF
>
V
DDF
100
400
μA
I
PPR
Program Current
(Read)
Flash
V
PPF
≤
V
DDQF
0.2
5
μA
V
PPF
= V
DDF
100
400
μA
I
PPW
Program Current
(Program)
Flash
V
PPF
= 12V ± 0.6V
Program in progress
5
10
mA
I
PPE
Program Current
(Erase)
Flash
V
PPF
= 12V ± 0.6V
Program in progress
5
10
mA
V
IL
Input Low Voltage
Flash &
SRAM
V
DDQF
= V
DDS
≥
2.7V
– 0.3
0.8
V
V
IH
Input High Voltage
Flash &
SRAM
V
DDQF
= V
DDS
≥
2.7V
2.2
V
DDQF
+0.3
V
V
OL
Output Low Voltage
Flash &
SRAM
V
DDQF
= V
DDS
= V
DD
min
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
Flash &
SRAM
V
DDQF
= V
DDS
= V
DD
min
I
OH
= –100μA
V
DDQ
–0.1
V
V
PPL
Program Voltage (Program or
Erase operations)
Flash
2.7
3.3
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36W432BGZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36W432BZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36W432T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36W432T70ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36W432T70ZA6T 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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