- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄359059 > M36W832Be85ZA1S (意法半導(dǎo)體) 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product PDF資料下載
參數(shù)資料
| 型號(hào)： | M36W832Be85ZA1S |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，引導(dǎo)塊閃存和8兆位的SRAM 512KB的x16，內(nèi)存產(chǎn)品多 |
| 文件頁(yè)數(shù)： | 1/64頁(yè) |
| 文件大小： | 897K |
| 代理商： | M36W832BE85ZA1S |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)
1/64
May 2003
M36W832TE
M36W832BE
32 Mbit (2Mb x16, Boot Block) Flash Memory
and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
DDF
= 2.7V to 3.3V
– V
DDS
= V
DDQF
= 2.7V to 3.3V
– V
PPF
= 12V for Fast Program (optional)
I
ACCESS TIMES: 70ns and 85ns
I
LOW POWER CONSUMPTION
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36W832TE: 88BAh
– Bottom Device Code, M36W832BE: 88BBh
FLASH MEMORY
I
32 Mbit (2Mb x16) BOOT BLOCK
– 8 x 4 KWord Parameter Blocks (Top or
Bottom Location)
I
PROGRAMMING TIME
– 10μs typical
– Double Word Programming Option
– Quadruple Word Programming Option
I
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
I
AUTOMATIC STANDBY MODE
I
PROGRAM and ERASE SUSPEND
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
COMMON FLASH INTERFACE
I
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device identifier
Figure 1. Packages
SRAM
I
8 Mbit (512Kb x 16)
I
ACCESS TIME: 70ns
I
LOW V
DDS
DATA RETENTION: 1.5V
I
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
FBGA
Stacked LFBGA66 (ZA)
12 x 8mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W832Te85ZA1T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TEZA | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Be70ZA1S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Be70ZA1T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE-ZAT | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W832BE85ZA1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832BE85ZA6S | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832BE85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832BEZA | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。