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參數(shù)資料
| 型號： | M36D0R6040T0ZAIT |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，頁）閃存和16兆位（最快1Mb × 16）移動存儲芯片，多芯片封裝 |
| 文件頁數(shù)： | 17/18頁 |
| 文件大?。?/td> | 329K |
| 代理商： | M36D0R6040T0ZAIT |
17/18
M36D0R6040T0, M36D0R6040B0
REVISION HISTORY
Table 12. Document Revision History
Date
Version
Revision Details
26-Nov-2003
1.0
First Issue
07-Dec-2003
2.0
Document status promoted from Target Specification to full Datasheet.
TFBGA67 package fully compliant with the ST ECOPACK specification.
Flash memory and PSRAM data updated to the revision 5.0 of the M58WR064F(T/B)
datasheet and to the revision 6.0 of the M69AR024B datasheet.
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| M36DR432BZA | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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| M36DR432B120ZA6C | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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| M36DR216C120ZA6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M36DR232 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232A120ZA6T | 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M36DR232AZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
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