參數(shù)資料
型號： M36D0R6040T0ZAIT
廠商： 意法半導體
英文描述： 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
中文描述： 64兆位（4Mb的x16插槽，多銀行，頁）閃存和16兆位（最快1Mb × 16）移動存儲芯片，多芯片封裝
文件頁數(shù)： 13/18頁
文件大小： 329K
代理商： M36D0R6040T0ZAIT
13/18
M36D0R6040T0, M36D0R6040B0
Table 7. Flash Memory DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. V
DDF
Dual Operation current is the sum of read and program or erase currents.
Table 8. Flash Memory DC Characteristics - Voltages
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDF
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDF
±1
μA
I
DD1
Supply Current
Asynchronous Read (f=6MHz)
E
F
= V
IL
, G
F
= V
IH
3
6
mA
I
DD2
Supply Current
(Reset)
RP
F
= V
SSF
± 0.2V
10
50
μA
I
DD3
Supply Current (Standby)
E
F
= V
DDF
± 0.2V
10
50
μA
I
DD4
Supply Current (Automatic
Standby)
E
F
= V
IL
, G
F
= V
IH
10
50
μA
I
DD5
(1)
Supply Current (Program)
V
PPF
= V
PPH
8
15
mA
V
PPF
= V
DDF
10
20
mA
Supply Current (Erase)
V
PPF
= V
PPH
8
15
mA
V
PPF
= V
DDF
10
20
mA
I
DD6 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
Read in another Bank
13
26
mA
I
DD7(1)
Supply Current Program/ Erase
Suspended (Standby)
E
F
= V
DDF
± 0.2V
10
50
μA
I
PP1(1)
V
PPF
Supply Current (Program)
V
PPF
= V
PPH
2
5
mA
V
PPF
= V
DDF
0.2
5
μA
V
PPF
Supply Current (Erase)
V
PPF
= V
PPH
2
5
mA
V
PPF
= V
DDF
0.2
5
μA
I
PP2
V
PPF
Supply Current (Read)
V
PPF
≤
V
DDF
0.2
5
μA
I
PP3(1)
V
PPF
Supply Current (Standby)
V
PPF
≤
V
DDF
0.2
5
μA
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDF
–0.4
V
DDF
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDF
–0.1
V
V
PP1
V
PPF
Program Voltage-Logic
Program, Erase
1
1.8
3.3
V
V
PPH
V
PPF
Program Voltage Factory
Program, Erase
11.4
12
12.6
V
V
PPLK
Program or Erase Lockout
0.4
V
V
LKO
V
DDF
Lock Voltage
1
V
V
RPH
RP
F
pin Extended High Voltage
3.3
V
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