參數(shù)資料
型號(hào)： M30L0R8000B0ZAQ
廠商： 意法半導(dǎo)體
英文描述： 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 76/83頁(yè)
文件大小： 1363K
代理商： M30L0R8000B0ZAQ
M30L0R8000T0, M30L0R8000B0
76/83
Figure 27. Buffer Enhanced Factory Program Flowchart and Pseudo Code
Write 80h to
Address WA1
AI07302a
Start
Write D0h to
Address WA1
Write FFFFh to
Address = NOT WA1
Read Status
Register
SR7 = 0
NO
NO
SR0 = 0
YES
Read Status Register
SR3 and SR1for errors
Exit
Write PDX
Address WA1
Increment Count
X = X + 1
Initialize count
X = 0
X = 32
YES
Read Status
Register
Last data
YES
Read Status
Register
SR7 = 1
YES
Full Status Register
Check
End
YES
SR4 = 1
NO
NO
NO
NO
SETUP PHASE
PROGRAM AND
VERIFY PHASE
EXIT PHASE
Buffer_Enhanced_Factory_Program_Command
(start_address, DataFlow[]) {
writeToFlash (start_address, 0x80) ;
writeToFlash (start_address, 0xD0) ;
do {
do {
status_register = readFlash (start_address);
if (status_register.SR4==1) { /*error*/
if (status_register.SR3==1) error_handler ( ) ;/*VPP error */
if (status_register.SR1==1) error_handler ( ) ;/* Locked Block */
}
while (status_register.SR7==1)
x=0; /* initialize count */
do {
writeToFlash (start_address, DataFlow[x]);
x++;
}while (x<32)
do {
status_register = readFlash (start_address);
}while (status_register.SR0==1)
} while (not last data)
writeToFlash (another_block_address, FFFFh)
do {
status_register = readFlash (start_address)
}while (status_register.SR7==0)
full_status_register_check();
}
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PDF描述
M30L0R8000T0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQE 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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