參數(shù)資料
型號: M30L0R8000B0ZAQ
廠商: 意法半導(dǎo)體
英文描述: 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述: 256兆位(16Mb的x16插槽,多銀行,多層次,多突發(fā))1.8V電源快閃記憶體
文件頁數(shù): 55/83頁
文件大?。?/td> 1363K
代理商: M30L0R8000B0ZAQ
55/83
M30L0R8000T0, M30L0R8000B0
PACKAGE MECHANICAL
Figure 19. TFBGA88 8x10mm - 8x10 ball array, 0.8mm pitch, Bottom View Package Outline
Note: Drawing is not to scale.
Table 28. TFBGA88 8x10mm - 8x10 ball array, 0.8mm pitch, Package Mechanical Data
Symbol
millimeters
inches
Typ
Min
Max
Typ
Min
Max
A
1.200
0.0472
A1
0.200
0.0079
A2
0.850
0.0335
b
0.350
0.300
0.400
0.0138
0.0118
0.0157
D
8.000
7.900
8.100
0.3150
0.3110
0.3189
D1
5.600
0.2205
ddd
0.100
0.0039
E
10.000
9.900
10.100
0.3937
0.3898
0.3976
E1
7.200
0.2835
E2
8.800
0.3465
e
0.800
0.0315
FD
1.200
0.0472
FE
1.400
0.0551
FE1
0.600
0.0236
SD
0.400
0.0157
SE
0.400
0.0157
A2
A1
A
BGA-Z42
ddd
D
E
e
b
SE
FD
E2
D1
SD
BALL "A1"
E1
FE
FE1
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M30L0R8000B0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory