參數(shù)資料
型號(hào): M30L0R8000B0ZAQ
廠商: 意法半導(dǎo)體
英文描述: 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述: 256兆位(16Mb的x16插槽,多銀行,多層次,多突發(fā))1.8V電源快閃記憶體
文件頁數(shù): 53/83頁
文件大?。?/td> 1363K
代理商: M30L0R8000B0ZAQ
53/83
M30L0R8000T0, M30L0R8000B0
Table 26. Write AC Characteristics, Chip Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. t
WHEL
has this value when reading in the targeted bank or when reading following a Set Configuration Register command. System
designers should take this into account and may insert a software No-Op instruction to delay the first read in the same bank after
issuing any command and to delay the first read to any address after issuing a Set Configuration Register command. If the first read
after the command is a Read Array operation in a different bank and no changes to the Configuration Register have been issued,
t
WHEL
is 0ns.
Symbol
Alt
Parameter
M30L0R8000T0/B
Unit
85
C
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
85
ns
t
AVEH
Address Valid to Chip Enable High
Min
45
ns
t
AVLH
Address Valid to Latch Enable High
Min
7
ns
t
DVEH
t
DS
Data Valid to Chip Enable High
Min
45
ns
t
EHAX
t
AH
Chip Enable High to Address Transition
Min
0
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
Min
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
Min
20
ns
t
EHGL
Chip Enable High to Output Enable Low
Min
0
ns
t
EHWH
t
CH
Chip Enable High to Write Enable High
Min
0
ns
t
ELKV
Chip Enable Low to Clock Valid
Min
7
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
Min
45
ns
t
ELLH
Chip Enable Low to Latch Enable High
Min
10
ns
t
ELQV
Chip Enable Low to Output Valid
Min
85
ns
t
GHEL
Output Enable High to Chip Enable Low
Min
17
ns
t
LHAX
Latch Enable High to Address Transition
Min
7
ns
t
LLLH
Latch Enable Pulse Width
Min
7
ns
t
WHEL(2)
Write Enable High to Chip Enable Low
Min
20
ns
t
WLEL
t
CS
Write Enable Low to Chip Enable Low
Min
0
ns
P
t
EHVPL
Chip Enable High to V
PP
Low
Min
200
ns
t
EHWPL
Chip Enable High to Write Protect Low
Min
200
ns
t
QVVPL
Output (Status Register) Valid to V
PP
Low
Min
0
ns
t
QVWPL
Output (Status Register) Valid to Write Protect
Low
Min
0
ns
t
VPHEH
t
VPS
V
PP
High to Chip Enable High
Min
200
ns
t
WPHEH
Write Protect High to Chip Enable High
Min
200
ns
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M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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