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參數(shù)資料
| 型號： | M30L0R7000T0ZAQF |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CAP 0.1UF 50V 10% X7R DIP-2 BULK R-MIL-C-39014 |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 35/83頁 |
| 文件大?。?/td> | 1329K |
| 代理商： | M30L0R7000T0ZAQF |
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M30L0R7000T0, M30L0R7000B0
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in
Ta-
ble 15.
In the M30L0R7000T0/B0 the maximum
number of Program/ Erase cycles depends on the
voltage supply used.
Table 15. Program, Erase Times and Endurance Cycles
Note: 1. T
A
= –40 to 85°C; V
DD
= 1.7V to 2.0V; V
DDQ
= 1.7V to 2.0V.
2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution).
3. Excludes the time needed to execute the command sequence.
4. Average on entire device.
Parameter
Condition
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit
V
P
D
Erase
Parameter Block
(16 KWords)
Preprogrammed
0.65
1
2.5
s
Not Preprogrammed
0.8
2.5
s
Main Block (64
KWords)
Preprogrammed
1.4
3
4
s
Not Preprogrammed
1.8
4
s
Program
(3)
Single Cell
Word Program
10
100
μs
Buffer Program
10
μs
Single Word
Word Program
10
100
μs
Buffer Program
10
μs
Buffer (32 Words) (Buffer Program)
320
μs
Main Block (64 KWords)
640
ms
Suspend Latency
Program
5
10
μs
Erase
5
25
μs
Program/Erase
Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
V
P
P
Erase
Parameter Block (16 KWords)
0.7
2.5
s
Main Block (64 KWords)
1.2
4
s
Program
(3)
Single Cell
Word Program
10
100
μs
Single Word
Word Program
10
100
μs
Buffered Enhanced
Factory Program
(4)
3.5
μs
Buffer (32
Words)
Word Program
320
μs
Buffered Enhanced
Factory Program
(4)
100
μs
Main Block (64
KWords)
Word Program
640
ms
Buffered Enhanced
Factory Program
(4)
200
ms
Bank (8 Mbits)
Word Program
5
s
Buffered Enhanced
Factory Program
(4)
1.6
s
Program/Erase
Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R7000T0ZAQT | CAP 0.22UF 50V 20% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R7000B0ZAQT | CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R8000T0ZAQ | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQF | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQT | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R7000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000XX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R8000B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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