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參數(shù)資料
| 型號(hào)： | M2Y51264TU88A2G-37B |
| 廠商： | NANYA TECHNOLOGY CORP |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240 |
| 封裝： | ROHS COMPLIANT, DIMM-240 |
| 文件頁數(shù)： | 3/19頁 |
| 文件大?。?/td> | 444K |
| 代理商： | M2Y51264TU88A2G-37B |
M2Y51264TU88A2G/ M2Y1G64TU8HA2G
512MB: 64M x 64 / 1GB: 128M x 64
Unbuffered DDR2 SDRAM DIMM
REV 1.0
11
6/2006
NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Environmental Requirements
Symbol
Parameter
Rating
Units
TOPR
Operating Temperature (ambient)
0 to 55
°C
HOPR
Operating Humidity (relative)
10 to 90
%
TSTG
Storage Temperature
-50 to 100
°C
HSTG
Storage Humidity (without condensation)
5 to 95
%
Barometric pressure (operating & storage) up to 9850ft.
105 to 69
kPa
Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability
Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
VDD
Voltage on VDD pins relative to Vss
-1.0 to +2.3
V
VDDQ
Voltage on VDDQ pins relative to Vss
-0.5 to +2.3
V
VDDL
Voltage on VDDL pins relative to Vss
-0.5 to +2.3
V
VIN, VOUT
Voltage on I/O pins relative to Vss
-0.5 to +2.3
V
TSTG
Storage Temperature (Plastic)
-55 to +100
°C
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Storage temperature is the case surface temperature on the center/top side of the DRAM.
Operating temperature Conditions
Symbol
Parameter
Rating
Units
Note
TCASE
Operating Temperature (Ambient)
0 to 95
°C
1
Note:
1.
Case temperature is measured at top and center side of any DRAMs.
2.
tCASE > 85°C
tREFI = 3.9 9s
DC Electrical Characteristics and Operating Conditions
Symbol
Parameter
Min
Max
Units
Notes
VDD
Supply Voltage
1.7
1.9
V
1
VDDL
DLL Supply Voltage
1.7
1.9
V
1
VDDQ
Output Supply Voltage
1.7
1.9
V
1
VSS, VSSQ
Supply Voltage, I/O Supply Voltage
0
V
VREF
Input Reference Voltage
0.49VDDQ
0.51VDDQ
V
1, 2
VTT
Termination Voltage
VREF - 0.04
VREF + 0.04
V
3
Note:
1.
There is no specific device VDD supply voltage requirement for SSTL_18 compliance. However, VDDQ must be less than or equal
to VDD under all conditions.
2.
VREF is expected to be equal to 0.5 V DDQ of the transmitting device, and to track variations in the DC level of the same.
Peak-to-peak noise on VREF may not exceed 2% of the DC value.
3.
VTT of transmitting device must track VREF of receiving device.
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