參數(shù)資料
型號(hào): M2V28D30ATP-75
廠商: Mitsubishi Electric Corporation
英文描述: 128M Double Data Rate Synchronous DRAM
中文描述: 128M的雙數(shù)據(jù)速率同步DRAM
文件頁(yè)數(shù): 6/36頁(yè)
文件大?。?/td> 1216K
代理商: M2V28D30ATP-75
6
MITSUBISHI ELECTRIC
Jun,'00
Preliminary
MITSUBISHI LSIs
DDR SDRAM (Rev.0.1)
M2S28D20/ 30/ 40ATP
128M Double Data Rate Synchronous DRAM
COMMAND TRUTH TABLE
H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number
COMMAND
MNEMONIC
CKE
n-1
CKE
n
/CS
/RAS
/CAS
/WE
BA0,1
A10
/AP
A0-9,
11
Deselect
DESEL
H
X
H
X
X
X
X
X
X
No Operation
NOP
H
X
L
H
H
H
X
X
X
Row Address Entry &
Bank Activate
ACT
H
H
L
L
H
H
V
V
V
Single Bank Precharge
PRE
H
H
L
L
H
L
V
L
X
Precharge All Banks
PREA
H
H
L
L
H
L
H
X
Column Address Entry
& Write
WRITE
H
H
L
H
L
L
V
L
V
Column Address Entry
& Write with
Auto-Precharge
Column Address Entry
& Read
Column Address Entry
& Read with
Auto-Precharge
WRITEA
H
H
L
H
L
L
V
H
V
READ
H
H
L
H
L
H
V
L
V
READA
H
H
L
H
L
H
V
H
V
Auto-Refresh
REFA
H
H
L
L
L
H
X
X
X
Self-Refresh Entry
REFS
H
L
L
L
L
H
X
X
X
Self-Refresh Exit
REFSX
L
H
H
X
X
X
X
X
X
L
H
L
H
H
H
X
X
X
Burst Terminate
TERM
H
H
L
H
H
L
X
X
X
Mode Register Set
MRS
H
H
L
L
L
L
L
L
V
X
note
1
NOTE:
1. Applies only to read bursts with autoprecharge disabled; this command is undefined (and should not be used) for
read bursts with autoprecharge enabled, and for write bursts.
BA0-BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0=1 ,
BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A11 provide the
op-code to be written to the selected Mode Register.
2
2.
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