- 您現在的位置：買賣IC網 > PDF目錄370825 > M2V28D30ATP-75 (Mitsubishi Electric Corporation) 128M Double Data Rate Synchronous DRAM PDF資料下載
參數資料
| 型號： | M2V28D30ATP-75 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 128M Double Data Rate Synchronous DRAM |
| 中文描述： | 128M的雙數據速率同步DRAM |
| 文件頁數： | 5/36頁 |
| 文件大?。?/td> | 1216K |
| 代理商： | M2V28D30ATP-75 |
第1頁第2頁第3頁第4頁當前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
5
MITSUBISHI ELECTRIC
Jun,'00
Preliminary
MITSUBISHI LSIs
DDR SDRAM (Rev.0.1)
M2S28D20/ 30/ 40ATP
128M Double Data Rate Synchronous DRAM
BASIC FUNCTIONS
The M2S28D20/30/40ATP provides basic functions, bank (row) activate, burst read / write, bank
(row) precharge, and auto / self refresh. Each command is defined by control signals of /RAS,
/CAS and /WE at CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip
select, refresh option, and precharge option, respectively. To know the detailed definition of
commands, please see the command truth table.
/CS
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @refresh command
A10
Precharge Option @precharge or read/write command
CLK
define basic commands
/CLK
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA. First output data appears after
/CAS latency. When A10 =H at this command, the bank is deactivated after the burst read (auto-
precharge,
READA)
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to be written
is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write
(auto-precharge,
WRITEA)
.
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates burst read
/write operation. When A10 =H at this command, all banks are deactivated (precharge all,
PREA
).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]
REFA command starts auto-refresh cycle. Refresh address including bank address are generated
internally. After this command, the banks are precharged automatically.
相關PDF資料 |
PDF描述 |
|---|---|
| M2V28D40ATP-10 | 128M Double Data Rate Synchronous DRAM |
| M2V28D40ATP-75 | 128M Double Data Rate Synchronous DRAM |
| M2S28D20ATP | 128M Double Data Rate Synchronous DRAM |
| M2S28D20ATP-10 | 128M Double Data Rate Synchronous DRAM |
| M2S28D20ATP-75 | 128M Double Data Rate Synchronous DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M2V28D40ATP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM |
| M2V28D40ATP-75 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM |
| M2V28S20ATP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM |
| M2V28S20ATP-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM |
| M2V28S20ATP-6L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。