- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370825 > M2V12D20TP-75L (Mitsubishi Electric Corporation) 512M Double Data Rate Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | M2V12D20TP-75L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 512M Double Data Rate Synchronous DRAM |
| 中文描述： | 512M雙數(shù)據(jù)速率同步DRAM |
| 文件頁(yè)數(shù)： | 8/38頁(yè) |
| 文件大?。?/td> | 754K |
| 代理商： | M2V12D20TP-75L |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)
MITSUBISHI
ELECTRIC
-8-
M2S12D20/ 30TP -75, -75L, -10, -10L
512M Double Data Rate Synchronous DRAM
Feb. '02
MITSUBISHI LSIs
DDR SDRAM (Rev.1.1)
MITSUBISHI ELECTRIC
FUNCTION TRUTH TABLE (continued)
Current State
WRITE(Auto-
Precharge
Disabled)
/CS /RAS /CAS /WE Address
H
X
X
L
H
H
L
H
H
Command
DESEL
NOP
TERM
Action
NOP (Continue Burst to END)
NOP (Continue Burst to END)
ILLEGAL
Terminate Burst, Latch CA, Begin
Read, Determine Auto-Precharge
Terminate Burst, Latch CA, Begin
Write, Determine Auto-Precharge
Bank Active / ILLEGAL
Terminate Burst, Precharge
ILLEGAL
Notes
X
H
L
X
X
BA
L
H
L
H
BA, CA, A10
READ / READA
3
L
H
L
L
BA, CA, A10
WRITE / WRITEA
3
L
L
L
L
L
L
H
H
L
H
L
H
BA, RA
BA, A10
X
Op-Code, Mode-
Add
X
X
BA
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op-Code, Mode-
Add
X
X
BA
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op-Code, Mode-
Add
ACT
PRE / PREA
REFA
2
L
L
L
L
MRS
ILLEGAL
H
L
L
L
L
L
L
L
X
H
H
H
H
L
L
L
X
H
H
L
L
H
H
L
X
H
L
H
L
H
L
H
DESEL
NOP
TERM
READ / READA
WRITE / WRITEA
ACT
PRE / PREA
REFA
NOP (Continue Burst to END)
NOP (Continue Burst to END)
ILLEGAL
ILLEGAL for Same Bank
ILLEGAL for Same Bank
Bank Active / ILLEGAL
Precharge / ILLEGAL
ILLEGAL
6
6
2
2
L
L
L
L
MRS
ILLEGAL
H
L
L
L
L
L
L
L
X
H
H
H
H
L
L
L
X
H
H
L
L
H
H
L
X
H
L
H
L
H
L
H
DESEL
NOP
TERM
READ / READA
WRITE / WRITEA
ACT
PRE / PREA
REFA
NOP (Continue Burst to END)
NOP (Continue Burst to END)
ILLEGAL
ILLEGAL for Same Bank
ILLEGAL for Same Bank
Bank Active / ILLEGAL
Precharge / ILLEGAL
ILLEGAL
7
7
2
2
L
L
L
L
MRS
ILLEGAL
READ with
Auto-Precharge
WRITE with
Auto-Precharge
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M2V12D30TP | 512M Double Data Rate Synchronous DRAM |
| M2V12D30TP-75L | 512M Double Data Rate Synchronous DRAM |
| M2S12D20TP-75L | 512M Double Data Rate Synchronous DRAM |
| M2S12D30TP | 512M Double Data Rate Synchronous DRAM |
| M2S12D30TP-75L | 512M Double Data Rate Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2V28D20ATP-10 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM |
| M2V28D20ATP-75 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM |
| M2V28D30ATP-10 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM |
| M2V28D30ATP-75 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM |
| M2V28D40ATP-10 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。