參數(shù)資料
型號(hào)： M2V12D20TP-75L
廠商： Mitsubishi Electric Corporation
英文描述： 512M Double Data Rate Synchronous DRAM
中文描述： 512M雙數(shù)據(jù)速率同步DRAM
文件頁(yè)數(shù)： 10/38頁(yè)
文件大小： 754K
代理商： M2V12D20TP-75L
MITSUBISHI
ELECTRIC
-10-
M2S12D20/ 30TP -75, -75L, -10, -10L
512M Double Data Rate Synchronous DRAM
Feb. '02
MITSUBISHI LSIs
DDR SDRAM (Rev.1.1)
MITSUBISHI ELECTRIC
FUNCTION TRUTH TABLE (continued)
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No Operation
NOTES:
1. All entries are valid only when CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of
specific bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
6. Refer to Read with Auto-Prechargein page 23.
7. Refer to Write with Auto-Prechargein page 25.
ILLEGAL = Device operation and/or data-integrity are not guaranteed.
Current State
REFRESHING
/CS /RAS /CAS /WE Address
H
X
X
L
H
H
L
H
H
L
H
L
L
L
H
L
L
H
L
L
L
Command
DESEL
NOP
TERM
READ / WRITE
ACT
PRE / PREA
REFA
Action
NOP (Idle after tRC)
NOP (Idle after tRC)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Notes
X
H
L
X
H
L
H
X
X
BA
BA, CA, A10
BA, RA
BA, A10
X
Op-Code, Mode-
Add
X
X
BA
BA, CA, A10
BA, RA
BA, A10
X
Op-Code, Mode-
Add
L
L
L
L
MRS
ILLEGAL
H
L
L
L
L
L
L
X
H
H
H
L
L
L
X
H
H
L
H
H
L
X
H
L
X
H
L
H
DESEL
NOP
TERM
READ / WRITE
ACT
PRE / PREA
REFA
NOP (Row Active after tRSC)
NOP (Row Active after tRSC)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
L
L
L
L
MRS
ILLEGAL
MODE
REGISTER
SETTING
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