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參數(shù)資料
| 型號： | M29DW128F60ZA6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| 中文描述： | 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體 |
| 文件頁數(shù)： | 29/93頁 |
| 文件大?。?/td> | 719K |
| 代理商： | M29DW128F60ZA6 |
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M29DW128F
6 Command Interface
29/93
If any selected blocks are protected then these are ignored and all the other selected blocks are
erased. If all of the selected blocks are protected the Block Erase operation appears to start but
will terminate within about 100μs, leaving the data unchanged. No error condition is given when
protected blocks are ignored.
During the Block Erase operation the memory will ignore all commands except the Erase
Suspend command and the Read/Reset command which is only accepted during the 50μs
time-out period. Typical block erase times are given in
Table 18
.
After the Erase operation has started all Bus Read operations to the Banks being erased will
output the Status Register on the Data Inputs/Outputs. See the section on the Status Register
for more details.
After the Block Erase operation has completed the memory will return to the Read mode,
unless an error has occurred.
When an error occurs, Bus Read operations to the Banks where the command was issued will
continue to output the Status Register. A Read/Reset command must be issued to reset the
error condition and return to Read mode.
6.1.6
Erase Suspend command
The Erase Suspend command may be used to temporarily suspend a Block or multiple Block
Erase operation. One Bus Write operation specifying the Bank Address of one of the Blocks
being erased is required to issue the command. Issuing the Erase Suspend command returns
the whole device to
Read mode.
The Program/Erase Controller will suspend within the Erase Suspend Latency time (see
Table 18
for value) of the Erase Suspend Command being issued. Once the Program/Erase
Controller has stopped the memory will be set to Read mode and the Erase will be suspended.
If the Erase Suspend command is issued during the period when the memory is waiting for an
additional block (before the Program/Erase Controller starts) then the Erase is suspended
immediately and will start immediately when the Erase Resume Command is issued. It is not
possible to select any further blocks to erase after the Erase Resume.
During Erase Suspend it is possible to Read and Program cells in blocks that are not being
erased; both Read and Program operations behave as normal on these blocks. If any attempt is
made to program in a protected block or in the suspended block then the Program command is
ignored and the data remains unchanged. The Status Register is not read and no error
condition is given. Reading from blocks that are being erased will output the Status Register.
It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands
during an Erase Suspend. The Read/Reset command must be issued to return the device to
Read Array mode before the Resume command will be accepted.
During Erase Suspend a Bus Read operation to the Extended Block will output the Extended
Block data. Once in the Extended Block mode, the Exit Extended Block command must be
issued before the erase operation can be resumed.
6.1.7
Erase Resume command
The Erase Resume command is used to restart the Program/Erase Controller after an Erase
Suspend. The command must include the Bank Address of the Erase-Suspended Bank,
otherwise the Program/Erase Controller is not restarted.
The device must be in Read Array mode before the Resume command will be accepted. An
Erase can be suspended and resumed more than once.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29DW128F60ZA6E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA6F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA6T | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F70NF1 | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F70NF1E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW128F60ZA6E | 功能描述:閃存 STD FLASH 128 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29DW128F60ZA6F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA6T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F70NF1 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F70NF1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
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