參數(shù)資料
型號： M29DW128F60ZA6
廠商： 意法半導體
英文描述： 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述： 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導塊）3V電源，快閃記憶體
文件頁數(shù)： 14/93頁
文件大?。?/td> 719K
代理商： M29DW128F60ZA6
2 Signal descriptions
M29DW128F
14/93
2
Signal descriptions
See
Figure 1: Logic Diagram
, and
Table 1: Signal Names
, for a brief overview of the signals
connected to this device.
2.1
Address Inputs (A0-A22)
The Address Inputs select the cells in the memory array to access during Bus Read operations.
During Bus Write operations they control the commands sent to the Command Interface of the
Program/Erase Controller.
2.2
Data Inputs/Outputs (DQ0-DQ7)
The Data I/O outputs the data stored at the selected address during a Bus Read operation.
During Bus Write operations they represent the commands sent to the Command Interface of
the internal state machine.
2.3
Data Inputs/Outputs (DQ8-DQ14)
The Data I/O outputs the data stored at the selected address during a Bus Read operation
when BYTE is High, V
IH
. When BYTE is Low, V
IL
, these pins are not used and are high
impedance. During Bus Write operations the Command Register does not use these bits.
When reading the Status Register these bits should be ignored.
2.4
Data Input/Output or Address Input (DQ15A–1)
When the device is in x16 Bus mode, this pin behaves as a Data Input/Output pin (as DQ8-
DQ14). When the device is in x8 Bus mode, this pin behaves as an address pin; DQ15A–1 Low
will select the LSB of the addressed Word, DQ15A–1 High will select the MSB. Throughout the
text consider references to the Data Input/Output to include this pin when the device operates
in x16 bus mode and references to the Address Inputs to include this pin when the device
operates in x8 bus mode except when stated explicitly otherwise.
2.5
Chip Enable (E)
The Chip Enable pin, E, activates the memory, allowing Bus Read and Bus Write operations to
be performed. When Chip Enable is High, V
IH
, all other pins are ignored.
2.6
Output Enable (G)
The Output Enable pin, G, controls the Bus Read operation of the memory.
相關(guān)PDF資料
PDF描述
M29DW128F60ZA6E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F70NF1 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F70NF1E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW128F60ZA6E 功能描述:閃存 STD FLASH 128 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29DW128F60ZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F70NF1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F70NF1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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