參數(shù)資料
型號: M29DW128F60ZA6
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,頁,引導(dǎo)塊)3V電源,快閃記憶體
文件頁數(shù): 25/93頁
文件大?。?/td> 719K
代理商: M29DW128F60ZA6
M29DW128F
5 Software Protection
25/93
Once the correct Password has been provided, the Lock-Down bit is cleared and the Non-
Volatile Modify Protection bits can be set or reset using the appropriate commands (the Set
Non-Volatile Modify Protection Bit command or the Clear Non-Volatile Modify Protection Bits
command, respectively).
If the Password provided is not correct, the Lock-Down bit remains locked and the state of the
Non-Volatile Modify Protection bits cannot be modified.
The Password is a 64-bit code located in the memory space. It must be programmed by the
user prior to selecting the Password Protection mode. The Password is programmed by issuing
a Password Program command and checked by issuing a Password Verify command. The
Password should be unique for each part.
Once the device is in Password Protection mode, the Password can no longer be read or
retrieved. Moreover, all commands to the address where the password is stored, are disabled.
Refer to
Table 10: Block Protection Status
and
Figure 7: Software Protection Scheme
for details
on the block protection scheme.
Table 10.
Block Protection Status
Figure 6.
Block Protection State Diagram
Volatile
Lock
Bit
Non-
Volatile
Modify
Protection
Bit
Lock-
Down bit
Block
Protectio
n Status
Block Protection Status
0
0
0
00h
Block
Unprotected
Non-Volatile Modify Protection bit can be
modified
(1)
1.
The Lock bit can always be modified by issuing a Clear Lock Bit command or by taking the device through a Power-up or
Hardware Reset.
0
0
1
Non-Volatile Modify Protection bit cannot be
modified
(1)
0
1
0
01h
Block
Program/
Erase
Protected
Non-Volatile Modify Protection bit can be
modified
(1)
1
0
0
1
1
0
0
1
1
Non-Volatile Modify Protection bit cannot be
modified
(1)
1
0
1
1
1
1
ai11503
Set Standard Protection
Mode
Default:
Standard
Protection
Password
Protection
Standard
Protection
Set Password Protection
Mode
相關(guān)PDF資料
PDF描述
M29DW128F60ZA6E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F70NF1 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F70NF1E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW128F60ZA6E 功能描述:閃存 STD FLASH 128 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29DW128F60ZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F70NF1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F70NF1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory