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參數(shù)資料
| 型號： | M29DW128F60ZA6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| 中文描述： | 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體 |
| 文件頁數(shù)： | 27/93頁 |
| 文件大?。?/td> | 719K |
| 代理商： | M29DW128F60ZA6 |
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M29DW128F
6 Command Interface
27/93
6
Command Interface
All Bus Write operations to the memory are interpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of
Bus Write operations will result in the memory returning to Read mode. The long command
sequences are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-bit or
8-bit mode.
6.1
Standard commands
See either
Table 12
, or
Table 11
, depending on the configuration that is being used, for a
summary of the Standard commands.
6.1.1
Read/Reset command
The Read/Reset command returns the memory to Read mode. It also resets the errors in the
Status Register. Either one or three Bus Write operations can be used to issue the Read/Reset
command.
The Read/Reset command can be issued, between Bus Write cycles before the start of a
program or erase operation, to return the device to Read mode. If the Read/Reset command is
issued during the time-out of a Block erase operation, the memory will take up to 10μs to abort.
During the abort period no valid data can be read from the memory.
The Read/Reset command will not abort an Erase operation when issued while in Erase
Suspend.
6.1.2
Auto Select command
The Auto Select command is used to read the Manufacturer Code, the Device Code, the
Protection Status of each block (Block Protection Status) and the Extended Block Protection
Indicator. It can be addressed to either Bank.
Three consecutive Bus Write operations are required to issue the Auto Select command. Once
the Auto Select command is issued Bus Read operations to specific addresses output the
Manufacturer Code, the Device Code, the Extended Block Protection Indicator and a Block
Protection Status (see
Table 11
and
Table 12
in conjunction with
Table 4
,
Table 5
,
Table 7
and
Table 8
). The memory remains in Auto Select mode until a Read/Reset or CFI Query command
is issued.
6.1.3
Read CFI Query command
The Read CFI Query Command is used to put the addressed bank in Read CFI Query mode.
Once in Read CFI Query mode Bus Read operations to the same bank will output data from the
Common Flash Interface (CFI) Memory Area. If the read operations are to a different bank from
the one specified in the command then the read operations will output the contents of the
memory array and not the CFI data.
One Bus Write cycle is required to issue the Read CFI Query Command. Care must be taken to
issue the command to one of the banks (A22-A19) along with the address shown in
Table 3
and
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29DW128F60ZA6E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA6F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60ZA6T | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F70NF1 | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F70NF1E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW128F60ZA6E | 功能描述:閃存 STD FLASH 128 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29DW128F60ZA6F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA6T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F70NF1 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F70NF1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
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