參數(shù)資料
型號(hào): M29DW128F60NF1F
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,頁(yè),引導(dǎo)塊)3V電源,快閃記憶體
文件頁(yè)數(shù): 88/93頁(yè)
文件大?。?/td> 719K
代理商: M29DW128F60NF1F
12 Part numbering
M29DW128F
88/93
Figure 25. In-System Equipment Group Protect Flowchart
1.
2.
Block Protection Groups are shown in
Appendix D
,
Table 34
.
RP can be either at V
IH
or at V
ID
when using the In-System Technique to protect the Extended Block.
AI07758b
WRITE 60h
ADDRESS = GROUP ADDRESS
A0, A2, A3, A6 = VIL, A1 = VIH
n = 0
Wait 100μs
WRITE 40h
ADDRESS = GROUP ADDRESS
A0, A2, A3, A6 = VIL, A1 = VIH
RP = VIH
++n
= 25
START
PASS
YES
NO
DATA = 01h
YES
NO
RP = VIH
Wait 4μs
V
P
S
E
READ DATA
ADDRESS = GROUP ADDRESS
A1 = VIH, A0, A2 to A7 = VIL
RP = VID
ISSUE READ/RESET
COMMAND
WRITE 60h
ADDRESS = GROUP ADDRESS
A0, A2, A3, A6 = VIL, A1 = VIH
ISSUE READ/RESET
COMMAND
FAIL
相關(guān)PDF資料
PDF描述
M29DW128F60NF1T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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