參數(shù)資料
型號: M29DW128F60NF1F
廠商: 意法半導體
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,頁,引導塊)3V電源,快閃記憶體
文件頁數(shù): 40/93頁
文件大小: 719K
代理商: M29DW128F60NF1F
6 Command Interface
M29DW128F
40/93
Once the Password Protection mode is activated the device will permanently remain in this
mode.
6.3.9
Verify Password Protection Mode command
The Verify Password Protection Mode command reads the status of the Password Protection
Mode Lock Bit. If it is ‘1’, the device is in Password Protection mode.
6.3.10 Set Standard Protection Mode command
The Set Standard Protection Mode command puts the device in Standard Protection mode by
programming the Standard Protection Mode Lock bit to ‘1’.
Six cycles are required to issue the Standard Protection Mode command:
1.
The first two cycles are unlock cycles.
2.
The third cycle issues the program command.
3.
The fourth and fifth cycles select the address (see
Table 17: Protection Command
Addresses
).
4.
The last cycle verifies if the operation has been successful. If DQ0 is set to ’1’, the
Standard Protection Mode has been successfully activated. If DQ0 is ‘0’, the operation has
failed and the command must be re-issued.
There must be a 100μs delay between the fourth and fifth cycles.
Once the Standard Protection mode is activated the device will permanently remain in this
mode.
6.3.11 Verify Standard Protection Mode command
The Verify Standard Protection Mode command reads the status of the Standard Protection
Mode Lock Bit. If it is ‘1’, the device is in Standard Protection mode.
6.3.12 Set Non-Volatile Modify Protection Bit command
A block or group of blocks can be protected from program or erase by issuing a Set Non-Volatile
Modify Protection Bit command along with the block address. This command sets the Non-
Volatile Modify Protection bit to ‘1’ for a given block or group of blocks.
Six cycles are required to issue the command:
1.
The first two cycles are unlock cycles.
2.
The third cycle issues the program command.
3.
The fourth and fifth cycles select the address (see
Table 17: Protection Command
Addresses
).
4.
The last cycle verifies if the operation has been successful. If DQ0 is set to ’1’, the Non-
Volatile Modify Protection bit has been successfully programmed. If DQ0 is ‘0’, the
operation has failed and the command must be re-issued.
There must be a 100μs delay between the fourth and fifth cycles.
The Non-Volatile Modify Protection bits are erased simultaneously by issuing a Clear Non-
Volatile Modify Protection Bits command except if the Lock-Down bit is set to ‘1’.
The Non-Volatile Modify Protection bits can be set a maximum of 100 times.
相關PDF資料
PDF描述
M29DW128F60NF1T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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M29DW128F60NF6T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
M29DW128F60NF1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 功能描述:閃存 128 Mbit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29DW128F60NF6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60NF6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory