參數(shù)資料
型號: M29DW128F60NF1F
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,頁,引導(dǎo)塊)3V電源,快閃記憶體
文件頁數(shù): 32/93頁
文件大?。?/td> 719K
代理商: M29DW128F60NF1F
6 Command Interface
M29DW128F
32/93
Table 12.
Standard Commands, 16-bit Mode
6.2
Fast Program commands
The M29DW128F offers a set of Fast Program commands to improve the programming
throughput:
Write to Buffer and Program
Double and Quadruple Word, Program
Double, Quadruple and Octuple Byte Program
Unlock Bypass.
See either
Table 14
, or
Table 13
, depending on the configuration that is being used, for a
summary of the Fast Program commands.
When V
PPH
is applied to the V
PP
/Write Protect pin the memory automatically enters the Fast
Program mode. The user can then choose to issue any of the Fast Program commands. Care
must be taken because applying a V
PPH
to the V
PP
/WP pin will temporarily unprotect any
protected block.
Only one bank can be programmed at any one time. The other bank must be in Read mode or
Erase Suspend.
Command
L
Bus Operations
(1)(2)
1.
Grey cells represent Read cycles. The other cells are Write cycles.
2.
X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block, BKA Bank Address. All values in the
table are in hexadecimal.
1st
2nd
3rd
4th
5th
6th
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Read/Reset
1
X
F0
3
555
AA
2AA
55
X
F0
Auto Select
Manufacturer Code
3
555
AA
2AA
55
(BKA)
555
90
(3)
3.
The Auto Select addresses and data are given in
Table 7: Read Electronic Signature, 16-bit Mode
, and
Table 8: Block
Protection, 16-bit Mode
, except for A9 that is ‘Don’t Care’.
(3)
Device Code
Extended Block
Protection Indicator
Block Protection Status
Program
4
555
AA
2AA
55
555
A0
PA
PD
Verify
3
555
AA
2AA
55
BA
BC
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Block Erase
6+
555
AA
2AA
55
555
80
555
AA
2AA
55
BA
30
Erase/Program Suspend
1
BKA
B0
Erase/Program Resume
1
BKA
30
Read CFI Query
1
(BKA)
555
98
相關(guān)PDF資料
PDF描述
M29DW128F60NF1T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW128F60NF1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 功能描述:閃存 128 Mbit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29DW128F60NF6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60NF6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory