參數(shù)資料
型號(hào)： M29DW128F60NF1F
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述： 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁(yè)，引導(dǎo)塊）3V電源，快閃記憶體
文件頁(yè)數(shù)： 30/93頁(yè)
文件大小： 719K
代理商： M29DW128F60NF1F
6 Command Interface
M29DW128F
30/93
6.1.8
Program Suspend command
The Program Suspend command allows the system to interrupt a program operation so that
data can be read from any block. When the Program Suspend command is issued during a
program operation, the device suspends the program operation within the Program Suspend
Latency time (see
Table 18
for value) and updates the Status Register bits. The Bank
Addresses of the Block being programmed must be specified in the Program Suspend
command.
After the program operation has been suspended, the system can read array data from any
address. However, data read from Program-Suspended addresses is not valid.
The Program Suspend command may also be issued during a program operation while an
erase is suspended. In this case, data may be read from any addresses not in Erase Suspend
or Program Suspend. If a read is needed from the Extended Block area (One-time Program
area), the user must use the proper command sequences to enter and exit this region.
The system may also issue the Auto Select command sequence when the device is in the
Program Suspend mode. The system can read as many Auto Select codes as required. When
the device exits the Auto Select mode, the device reverts to the Program Suspend mode, and is
ready for another valid operation. See Auto Select command sequence for more information.
6.1.9
Program Resume command
After the Program Resume command is issued, the device reverts to programming. The
controller can determine the status of the program operation using the DQ7 or DQ6 status bits,
just as in the standard program operation. See Write Operation Status for more information.
The system must write the Program Resume command, specifying the Bank addresses of the
Program-Suspended Block, to exit the Program Suspend mode and to continue the
programming operation.
Further issuing of the Resume command is ignored. Another Program Suspend command can
be written after the device has resumed programming.
6.1.10 Program command
The Program command can be used to program a value to one address in the memory array at
a time. The command requires four Bus Write operations, the final Write operation latches the
address and data in the internal state machine and starts the Program/Erase Controller.
Programming can be suspended and then resumed by issuing a Program Suspend command
and a Program Resume command, respectively (see
Program Suspend command
and
Program Resume command
paragraphs).
If the address falls in a protected block then the Program command is ignored, the data remains
unchanged. The Status Register is never read and no error condition is given.
After programming has started, Bus Read operations in the Bank being programmed output the
Status Register content, while Bus Read operations to the other Bank output the contents of
the memory array. See the section on the Status Register for more details. Typical program
times are given in
Table 18
.
After the program operation has completed the memory will return to the Read mode, unless an
error has occurred. When an error occurs Bus Read operations to the Bank where the
command was issued will continue to output the Status Register. A Read/Reset command must
be issued to reset the error condition and return to Read mode.
相關(guān)PDF資料
PDF描述
M29DW128F60NF1T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW128F60NF1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 功能描述:閃存 128 Mbit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29DW128F60NF6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60NF6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
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