參數(shù)資料
型號： M28W160ECB70ZB6E
廠商： 意法半導體
英文描述： 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述： 16兆位（1兆x16插槽，引導塊）3V電源快閃記憶體
文件頁數(shù)： 44/50頁
文件大?。?/td> 860K
代理商： M28W160ECB70ZB6E
M28W160ECT, M28W160ECB
44/50
Figure 21. Erase Suspend & Resume Flowchart and Pseudo Code
Write 70h
AI03542b
Read Status
Register
YES
NO
b7 = 1
YES
NO
b6 = 1
Erase Continues
Write D0h
Read data from
another block
or
Program/Protection Program
or
Block Protect/Unprotect/Lock
Start
Write B0h
Erase Complete
Write FFh
Read Data
Write FFh
erase_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
writeToFlash (any_address, 0x70) ;
/* read status register to check if
erase has already completed */
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
} while (status_register.b7== 0) ;
if (status_register.b6==0) /*erase completed */
{ writeToFlash (any_address, 0xFF) ;
read_data ( ) ;
/*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
}
else
{ writeToFlash (any_address, 0xFF) ;
read_program_data ( );
/*read or program data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume erase*/
}
}
相關PDF資料
PDF描述
M28W160ECB70ZB6F 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6S 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6T Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 22 nC; R<sub>DS(on)</sub>: 3@10V4@5V4.4@4.5V mOhm; Thermal Resistance: 0.59 K/W; V<sub>DS</sub>max: 30 V
M28W160ECB70ZB6U TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 56 nC; R<sub>DS(on)</sub>: 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 40 V
M28W160ECB85N1E TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 50 nC; R<sub>DS(on)</sub>: 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 55 V
相關代理商/技術參數(shù)
參數(shù)描述
M28W160ECB70ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6U 制造商:Micron Technology Inc 功能描述:16 MBIT (1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY - Tape and Reel
M28W160ECB70ZB6U TR 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 70NS 46TFBGA
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