參數(shù)資料
型號(hào): M28W160ECB70ZB6E
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(1兆x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁(yè)數(shù): 31/50頁(yè)
文件大?。?/td> 860K
代理商: M28W160ECB70ZB6E
31/50
M28W160ECT, M28W160ECB
Figure 15. TFBGA46 Daisy Chain - Package Connections (Top view through package)
Figure 16. TFBGA46 Daisy Chain - PCB Connections proposal (Top view through package)
AI03298
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AI3299
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相關(guān)PDF資料
PDF描述
M28W160ECB70ZB6F 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6S 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6T Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 22 nC; R<sub>DS(on)</sub>: 3@10V4@5V4.4@4.5V mOhm; Thermal Resistance: 0.59 K/W; V<sub>DS</sub>max: 30 V
M28W160ECB70ZB6U TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 56 nC; R<sub>DS(on)</sub>: 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 40 V
M28W160ECB85N1E TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 50 nC; R<sub>DS(on)</sub>: 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 55 V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M28W160ECB70ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6U 制造商:Micron Technology Inc 功能描述:16 MBIT (1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY - Tape and Reel
M28W160ECB70ZB6U TR 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 70NS 46TFBGA