參數(shù)資料
型號: M28W160ECB70ZB6E
廠商: 意法半導體
英文描述: 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(1兆x16插槽,引導塊)3V電源快閃記憶體
文件頁數(shù): 21/50頁
文件大?。?/td> 860K
代理商: M28W160ECB70ZB6E
21/50
M28W160ECT, M28W160ECB
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment
12., Operating and AC Measurement Conditions
.
Designers should check that the operating condi-
tions in their circuit match the measurement condi-
tions when relying on the quoted parameters.
Conditions
summarized
in
Table
Table 12. Operating and AC Measurement Conditions
Figure 7. AC Measurement I/O Waveform
Figure 8. AC Measurement Load Circuit
Table 13. Capacitance
Symbol
Note: Sampled only, not 100% tested.
Parameter
M28W160ECT, M28W160ECB
Units
70
85
90
100
Min
Max
Min
Max
Min
Max
Min
Max
V
DD
Supply Voltage
2.7
3.6
2.7
3.6
2.7
3.6
2.7
3.6
V
V
DDQ
Supply Voltage (V
DDQ
V
DD
)
2.7
3.6
2.7
3.6
2.7
3.6
1.65
3.6
V
Ambient Operating Temperature
– 40
85
– 40
85
– 40
85
– 40
85
°C
Load Capacitance (C
L
)
50
50
50
50
pF
Input Rise and Fall Times
5
5
5
5
ns
Input Pulse Voltages
0 to V
DDQ
0 to V
DDQ
0 to V
DDQ
0 to V
DDQ
V
Input and Output Timing Ref. Voltages
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
AI00610
VDDQ
0V
VDDQ/2
AI00609C
VDDQ
CL
CL includes JIG capacitance
25k
DEVICE
UNDER
TEST
0.1μF
VDD
0.1μF
VDDQ
25k
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
相關PDF資料
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M28W160ECB70ZB6U TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 56 nC; R<sub>DS(on)</sub>: 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 40 V
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