參數(shù)資料
型號(hào)： M28W160ECB70ZB6E
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述： 16兆位（1兆x16插槽，引導(dǎo)塊）3V電源快閃記憶體
文件頁(yè)數(shù)： 15/50頁(yè)
文件大小： 860K
代理商： M28W160ECB70ZB6E
15/50
M28W160ECT, M28W160ECB
Table 5. Read Block Lock Signature
Note: 1. A Locked-Down Block can be locked "DQ0 = 1" or unlocked "DQ0 = 0"; see Block Locking section.
Table 6. Read Protection Register and Lock Register
Table 7. Program, Erase Times and Program/Erase Endurance Cycles
Block Status
E
G
W
A0
A1
A2-A7
A8-A11
A12-A19
DQ0
DQ1
DQ2-DQ15
Locked Block
V
IL
V
IL
V
IH
V
IL
V
IH
0
Don't Care
Block Address
1
0
00h
Unlocked Block
V
IL
V
IL
V
IH
V
IL
V
IH
0
Don't Care
Block Address
0
0
00h
Locked-Down
Block
V
IL
V
IL
V
IH
V
IL
V
IH
0
Don't Care
Block Address
X
(1)
1
00h
Word
E
G
W
A0-A7
A8-A19
DQ0
DQ1
DQ2
DQ3-DQ7 DQ8-DQ15
Lock
V
IL
V
IL
V
IH
80h
Don't Care
0
OTP Prot.
data
Security
prot. data
00h
00h
Unique ID 0
V
IL
V
IL
V
IH
81h
Don't Care
ID data
ID data
ID data
ID data
ID data
Unique ID 1
V
IL
V
IL
V
IH
82h
Don't Care
ID data
ID data
ID data
ID data
ID data
Unique ID 2
V
IL
V
IL
V
IH
83h
Don't Care
ID data
ID data
ID data
ID data
ID data
Unique ID 3
V
IL
V
IL
V
IH
84h
Don't Care
ID data
ID data
ID data
ID data
ID data
OTP 0
V
IL
V
IL
V
IH
85h
Don't Care
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 1
V
IL
V
IL
V
IH
86h
Don't Care
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 2
V
IL
V
IL
V
IH
87h
Don't Care
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 3
V
IL
V
IL
V
IH
88h
Don't Care
OTP data
OTP data
OTP data
OTP data
OTP data
Parameter
Test Conditions
M28W160EC
Unit
Min
Typ
Max
Word Program
V
PP
= V
DD
10
200
μs
Double Word Program
V
PP
= 12V ±5%
10
200
μs
Main Block Program
V
PP
= 12V ±5%
0.16
5
s
V
PP
= V
DD
0.32
5
s
Parameter Block Program
V
PP
= 12V ±5%
0.02
4
s
V
PP
= V
DD
0.04
4
s
Main Block Erase
V
PP
= 12V ±5%
1
10
s
V
PP
= V
DD
1
10
s
Parameter Block Erase
V
PP
= 12V ±5%
0.4
10
s
V
PP
= V
DD
0.4
10
s
Program/Erase Cycles (per Block)
100,000
cycles
相關(guān)PDF資料
PDF描述
M28W160ECB70ZB6F 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6S 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6T Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 22 nC; R<sub>DS(on)</sub>: 3@10V4@5V4.4@4.5V mOhm; Thermal Resistance: 0.59 K/W; V<sub>DS</sub>max: 30 V
M28W160ECB70ZB6U TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 56 nC; R<sub>DS(on)</sub>: 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 40 V
M28W160ECB85N1E TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 50 nC; R<sub>DS(on)</sub>: 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 55 V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M28W160ECB70ZB6F 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6S 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6U 制造商:Micron Technology Inc 功能描述:16 MBIT (1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY - Tape and Reel
M28W160ECB70ZB6U TR 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 70NS 46TFBGA
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