參數(shù)資料
型號(hào): M25PE80-VMN6TP
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁(yè)數(shù): 9/61頁(yè)
文件大?。?/td> 326K
代理商: M25PE80-VMN6TP
M25PE80
Signal description
9/61
2.6
Write Protect (W) or Top Sector Lock (TSL)
The Write Protect function is available in the T9HX process only
(see
Important
note on page 6
).
The Write Protect (W) input is used to freeze the size of the area of memory that is
protected against write, program and erase instructions (as specified by the values in
the BP2, BP1 and BP0 bits of the Status Register. See
Section 6.4: Read Status
Register (RDSR)
for a description of these bits).
The Top Sector Lock function is available in the T7Y process only (see
Important
note on page 6
)
.
The input signal sets the device in the Hardware Protected mode, when Top Sector
Lock (TSL) is connected to V
SS
, causing the top 256 pages (upper addresses) of the
memory to become read-only (protected from write, program and erase operations).
When Top Sector Lock (TSL) is connected to V
CC
, the top 256 pages of memory
behave like the other pages of memory.
2.7
V
CC
supply voltage
V
CC
is the supply voltage.
2.8
V
SS
ground
V
SS
is the reference for the V
CC
supply voltage.
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