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參數(shù)資料
| 型號： | M25PE80-VMN6TP |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 59/61頁 |
| 文件大?。?/td> | 326K |
| 代理商： | M25PE80-VMN6TP |
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M25PE80
Revision history
59/61
14
Revision history
Table 29.
Document revision history
Date
Version
Changes
24-Nov-2004
0.1
First Issue.
07-Dec-2004
0.2
4KB Software protection granularity extended to Sector 15.
10-May-2005
0.3
SO16W package removed, SO8W package added.
End timing line of t
SHQZ
modified in
Figure 28: Output timing
. Plating
Technology options modified in
Table 28: Ordering information scheme
.
Minor text changes.
Tables
2
and
3
and
Figure 6
for details on the software protection scheme.
25-Jul-2005
0.4
Lock Register programming sequence detailed in Section
Write to Lock
Register (WRLR)
.
Sections
An easy way to modify data
,
A fast way to modify data
,
Page
Write (PW)
and
Page Program (PP)
, updated to explain when using Page
Write and Page Program instructions.
Bulk Erase cycle time (t
BE
), Page Write cycle time (t
PW
) and Page
Program cycle time (t
PP
) updated in
Table 21: AC characteristics
.
24-Aug-2005
1.0
Version number updated for internet. No document changes.
25-Aug-2005
2.0
Document status updated to Preliminary Data.
22-Nov-2005
3.0
Page Program cycle time, t
PP
, and Page Write Cycle Time (n Bytes), t
PW
,
updated in
Table 21: AC characteristics
. I
CC3
modified in
Table 20: DC
characteristics
.
t
SLCH
, t
CHSL
, t
CHSH
, t
SHCH
and t
BE
modified in
Table 21: AC
characteristics
.
MLP package renamed. Under
Plating technology
, Blank option removed.
Note 3
to
Table 21
modified. Address modified in
Figure 6: Block diagram
.
Note added to
Figure 30
and
Figure 31
.
Document status promoted from Preliminary Data to full Datasheet status.
12-May-2006
4
Don’t care address bits modified in
Note 1
(below
Figure 12
),
Note 1
(below
Figure 13
),
Note 1
(below
Figure 15
),
Note 1
(below
Figure 16
),
Note 1
(below
Figure 18
) and
Note 1
(below
Figure 20
).
Small text changes.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PX32 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMP6E | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMP6F | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMW6E | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMW6F | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE80-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 8Mbit 1M x 8bit 8ns T/R 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel 制造商:Micron Technology Inc 功能描述:IC FLASH 8MX1 PBF SOIC 3.0V |
| M25PE80-VMP6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out |
| M25PE80-VMP6G | 功能描述:閃存 8 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE80-VMP6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out |
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