參數(shù)資料
型號(hào)： M25PE80-VMN6TP
廠商： 意法半導(dǎo)體
元件分類(lèi)： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 40/61頁(yè)
文件大小： 326K
代理商： M25PE80-VMN6TP
Instructions
M25PE80
40/61
6.14
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address Bytes on Serial Data Input (D). Any address inside the
Sector (see
Table 5
) is a valid address for the Sector Erase (SE) instruction. Chip Select (S)
must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 20
.
Chip Select (S) must be driven High after the eighth bit of the last address Byte has been
latched in, otherwise the Sector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is t
SE
) is
initiated. While the Sector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified
time before the cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a sector that contains a page that is Hardware or
software Protected is not executed.
Any Sector Erase (SE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a Sector Erase (SE) cycle is in progress, the Sector
Erase cycle is interrupted and data may not be erased (see
Table 15: Device status after a
Reset Low pulse
). On Reset going Low, the device enters the Reset mode and a time of
t
RHSL
is then required before the device can be re-selected by driving Chip Select (S) Low.
For the value of t
RHSL
see
Table 24: Timings after a Reset Low pulse
in
Section 11: DC and
AC parameters
.
Figure 20.
Sector Erase (SE)
instruction sequence
1.
Address bits A23 to A20 are Don’t Care.
24 Bit Address
C
D
AI03751D
S
2
1
3
4
5
6
7
8
9
29 30 31
Instruction
0
23 22
2
0
1
MSB
相關(guān)PDF資料
PDF描述
M25PX32 4 Mbit Uniform Sector, Serial Flash Memory
M25PX32-VMP6E 4 Mbit Uniform Sector, Serial Flash Memory
M25PX32-VMP6F 4 Mbit Uniform Sector, Serial Flash Memory
M25PX32-VMW6E 4 Mbit Uniform Sector, Serial Flash Memory
M25PX32-VMW6F 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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M25PE80-VMP6G 功能描述:閃存 8 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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