參數(shù)資料
型號(hào): M25PE80-VMN6TP
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 45/61頁
文件大小: 326K
代理商: M25PE80-VMN6TP
M25PE80
Power-up and Power-down
45/61
Figure 24.
Power-up timing
Table 14.
Power-Up timing and V
WI
threshold
Symbol
Parameter
Min.
Max.
Unit
t
VSL(1)
t
PUW(1)
V
WI(1)
1.
These parameters are characterized only, over the temperature range –40°C to +85°C.
V
CC
(min) to S low
30
μs
Time delay before the first Write, Program or Erase instruction
1
10
ms
Write Inhibit Voltage
1.5
2.5
V
VCC
AI04009C
VCC(min)
VWI
Reset State
of the
Device
Chip Selection Not Allowed
Program, Erase and Write Commands are Rejected by the Device
tVSL
tPUW
time
Read Access allowed
Device fully
accessible
VCC(max)
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