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  • 參數(shù)資料
    型號: M25PE20-VMP6G
    廠商: 意法半導體
    元件分類: DRAM
    英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
    中文描述: 4兆位統(tǒng)一部門,串行閃存
    文件頁數(shù): 1/60頁
    文件大小: 310K
    代理商: M25PE20-VMP6G
    January 2007
    Rev 3
    1/60
    1
    M25PE20
    M25PE10
    1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories
    with Byte-Alterability, 50 MHz SPI bus, standard pinout
    Features
    1 or 2 Mbit of Page-Erasable Flash memory
    2.7 V to 3.6 V single supply voltage
    SPI bus compatible serial interface
    50 MHz clock rate (maximum)
    Page size: 256 bytes
    – Page Write in 11 ms (typical)
    – Page Program in 0.8 ms (typical)
    – Page Erase in 10 ms (typical)
    SubSector Erase (32 Kbits)
    Sector Erase (512 Kbits)
    Bulk Erase (1 Mbit for the M25PE10, 2 Mbits for
    the M25PE20)
    Deep Power-down mode 1μA (typical)
    Electronic Signature
    – JEDEC Standard Two-Byte Signature
    (8012h for M25PE20
    8011h for M25PE10)
    Software Write Protection on a 64 Kbyte sector
    basis
    More than 100 000 Write cycles
    More than 20 year data retention
    Hardware Write Protection of the memory area
    selected using the BP0 and BP1 bits
    Package
    – ECOPACK (RoHS compliant)
    SO8N (MN)
    150 mil width
    VFQFPN8 (MP)
    6 × 5 mm
    www.st.com
    相關PDF資料
    PDF描述
    M25PE20-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
    M25PE20-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
    M25PE10-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
    M25PE10-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
    M25PE20 4 Mbit Uniform Sector, Serial Flash Memory
    相關代理商/技術參數(shù)
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