參數(shù)資料
型號(hào): M25PE10-VMN6TP
廠商: 意法半導(dǎo)體
元件分類(lèi): DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門(mén),串行閃存
文件頁(yè)數(shù): 1/37頁(yè)
文件大?。?/td> 198K
代理商: M25PE10-VMN6TP
1/37
October 2005
M25PE20
M25PE10
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories
with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out
FEATURES SUMMARY
Industrial Standard SPI Pin-out
1 or 2 Mbit of Page-Erasable Flash Memory
Page Write (up to 256 Bytes) in 11ms (typical)
Page Program (up to 256 Bytes) in 1.2ms
(typical)
Page Erase (256 Bytes) in 10ms (typical)
Sector Erase (512 Kbit)
2.7 to 3.6V Single Supply Voltage
SPI Bus Compatible Serial Interface
33MHz Clock Rate (maximum)
Deep Power-down Mode 1
μ
A (typical)
Electronic Signature
JEDEC Standard Two-Byte Signature
(8012h for M25PE20
8011h for M25PE10)
More than 100,000 Write Cycles
More than 20 Year Data Retention
Hardware Write Protection of the Top Sector
(64KB)
Packages
ECOPACK (RoHS compliant)
Figure 1. Packages
VDFPN8 (MP)
6x5mm (MLP8)
8
1
SO8N (MN)
150 mil width
相關(guān)PDF資料
PDF描述
M25PE20 4 Mbit Uniform Sector, Serial Flash Memory
M25PE16 4 Mbit Uniform Sector, Serial Flash Memory
M25PE16-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE16-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE16-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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