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參數(shù)資料
| 型號(hào)： | M25PE10-VMN6TP |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門(mén)，串行閃存 |
| 文件頁(yè)數(shù)： | 13/37頁(yè) |
| 文件大小： | 198K |
| 代理商： | M25PE10-VMN6TP |
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M25PE10, M25PE20
Write Enable (WREN)
The Write Enable (WREN) instruction (
Figure 8.
)
sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set pri-
or to every Page Write (PW), Page Program (PP),
Page Erase (PE), and Sector Erase (SE) instruc-
tion.
The Write Enable (WREN) instruction is entered
by driving Chip Select (S) Low, sending the in-
struction code, and then driving Chip Select (S)
High.
Figure 8. Write Enable (WREN) Instruction Sequence
Write Disable (WRDI)
The Write Disable (WRDI) instruction (
Figure 9.
)
resets the Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by
driving Chip Select (S) Low, sending the instruc-
tion code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under
the following conditions:
–
–
–
–
–
–
Power-up
Write Disable (WRDI) instruction completion
Page Write (PW) instruction completion
Page Program (PP) instruction completion
Page Erase (PE) instruction completion
Sector Erase (SE) instruction completion
Figure 9. Write Disable (WRDI) Instruction Sequence
C
D
AI02281E
S
Q
2
1
3
4
5
6
7
High Impedance
0
Instruction
C
D
AI03750D
S
Q
2
1
3
4
5
6
7
High Impedance
0
Instruction
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE20 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE10-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3V/3.3V 1Mbit 128K x 8bit 8ns T/R 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PE10-VMN6TPBA TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8SO |
| M25PE10-VMP6G | 制造商:Micron Technology Inc 功能描述:FLASH SERL-SPI 3.3V 1MBIT 128KX8 8NS 8PIN VDFPN EP - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN |
| M25PE10-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE10-VMP6TG | 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱:71P71804S200BQ |
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