- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377803 > M25PE10-VMN6TP (意法半導(dǎo)體) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M25PE10-VMN6TP |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁(yè)數(shù)： | 25/37頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | M25PE10-VMN6TP |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)當(dāng)前第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)
25/37
M25PE10, M25PE20
Table 7. Power-Up Timing and V
WI
Threshold
Symbol
Note: 1. These parameters are characterized only, over the temperature range –40°C to +85°C.
INITIAL DELIVERY STATE
The device is delivered with the memory array
erased: all bits are set to 1 (each Byte contains
FFh). All usable Status Register bits are 0.
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 8. Absolute Maximum Ratings
Note: 1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK
7191395 specification, and
the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500
, R2=500
)
Parameter
Min.
Max.
Unit
t
VSL1
V
CC
(min) to S low
30
μs
t
PUW1
Time delay before the first Write, Program or Erase instruction
1
10
ms
V
WI1
Write Inhibit Voltage
1.5
2.5
V
Symbol
Parameter
Min.
Max.
Unit
T
STG
Storage Temperature
–65
150
°C
T
LEAD
Lead Temperature during Soldering
See note
1
°C
V
IO
Input and Output Voltage (with respect to Ground)
–0.6
4.0
V
V
CC
Supply Voltage
–0.6
4.0
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
2
–2000
2000
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE20 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE10-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3V/3.3V 1Mbit 128K x 8bit 8ns T/R 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PE10-VMN6TPBA TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8SO |
| M25PE10-VMP6G | 制造商:Micron Technology Inc 功能描述:FLASH SERL-SPI 3.3V 1MBIT 128KX8 8NS 8PIN VDFPN EP - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN |
| M25PE10-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE10-VMP6TG | 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。