參數(shù)資料
型號: M25PE20-VMN6TP
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 53/60頁
文件大?。?/td> 310K
代理商: M25PE20-VMN6TP
M25PE20, M25PE10
DC and AC parameters
53/60
Figure 27.
Serial input timing
Figure 28.
Top Sector Lock (T7X process) or Write Protect (T9HX process) setup and hold
timing
1.
For the differences between devices produced in the two processes, see
Important note on page 6
.
C
D
AI01447C
S
MSB IN
Q
tDVCH
High Impedance
LSB IN
tSLCH
tCHDX
tCHCL
tCLCH
tSHCH
tSHSL
tCHSH
tCHSL
C
D
S
Q
High Impedance
TSL
tTHSL
tSHTL
AI3559
tWHSL
tSHWL
W
or
相關(guān)PDF資料
PDF描述
M25PE20-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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M25PE20-VMP6P 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE20-VMP6TG 功能描述:IC FLASH 2MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP(0.465",11.8mm 寬) 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8