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參數(shù)資料
| 型號(hào)： | M25PE20-VMN6TP |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 43/60頁 |
| 文件大小： | 310K |
| 代理商： | M25PE20-VMN6TP |
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M25PE20, M25PE10
Instructions
43/60
6.17
Release from Deep Power-down (RDP)
Once the device has entered the Deep Power-down mode, all instructions are ignored
except the Release from Deep Power-down (RDP) instruction. Executing this instruction
takes the device out of the Deep Power-down mode.
The Release from Deep Power-down (RDP) instruction is entered by driving Chip Select (S)
Low, followed by the instruction code on Serial Data Input (D). Chip Select (S) must be
driven Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 24
.
The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select
(S) High. Sending additional clock cycles on Serial Clock (C), while Chip Select (S) is driven
Low, cause the instruction to be rejected, and not executed.
After Chip Select (S) has been driven High, followed by a delay, t
RDP
, the device is put in
Standby Power mode. Chip Select (S) must remain High at least until this period is over. The
device waits to be selected, so that it can receive, decode and execute instructions.
Any Release from Deep Power-down (RDP) instruction, while an Erase, Program or Write
cycle is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 24.
Release from Deep Power-down (RDP) instruction sequence
C
D
AI06807
S
2
1
3
4
5
6
7
0
t
RDP
Standby Power Mode
Deep Power-down Mode
Q
High Impedance
Instruction
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE20-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE20-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PE20-VMN6TPBA TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 2MBIT 75MHZ 8SO |
| M25PE20-VMP6G | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3V/3.3V 2Mbit 256K x 8bit 8ns 8-Pin VFQFPN EP Tray 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M25PE20-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE20-VMP6TG | 功能描述:IC FLASH 2MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
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