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參數(shù)資料
| 型號： | M25PE20-VMN6TP |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 40/60頁 |
| 文件大?。?/td> | 310K |
| 代理商： | M25PE20-VMN6TP |
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Instructions
M25PE20, M25PE10
40/60
6.14
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address Bytes on Serial Data Input (D). Any address inside the
Sector (see
Table 5
or
Table 6
) is a valid address for the Sector Erase (SE) instruction. Chip
Select (S) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 21
.
Chip Select (S) must be driven High after the eighth bit of the last address Byte has been
latched in, otherwise the Sector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is t
SE
) is
initiated. While the Sector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified
time before the cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a sector that contains a page that is Hardware
Protected is not executed.
Any Sector Erase (SE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
Figure 21.
Sector Erase (SE)
instruction sequence
1.
Address bits A23 to A18 are Don’t Care in the M25PE20. Address bits A23 to A17 are Don’t Care in the
M25PE10.
24 Bit Address
C
D
AI03751D
S
2
1
3
4
5
6
7
8
9
29 30 31
Instruction
0
23 22
2
0
1
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE20-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE20-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PE20-VMN6TPBA TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 2MBIT 75MHZ 8SO |
| M25PE20-VMP6G | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3V/3.3V 2Mbit 256K x 8bit 8ns 8-Pin VFQFPN EP Tray 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M25PE20-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE20-VMP6TG | 功能描述:IC FLASH 2MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
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