- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377802 > M25PE10-VMP6G (意法半導(dǎo)體) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M25PE10-VMP6G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 13/60頁 |
| 文件大?。?/td> | 310K |
| 代理商： | M25PE10-VMP6G |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當(dāng)前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁
M25PE20, M25PE10
Operating features
13/60
4.3
A fast way to modify data
The Page Program (PP) instruction provides a fast way of modifying data (up to 256
contiguous Bytes at a time), provided that it only involves resetting bits to 0 that had
previously been set to 1.
This might be:
when the designer is programming the device for the first time
when the designer knows that the page has already been erased by an earlier Page
Erase (PE), SubSector Erase (SSE), Sector Erase (SE) or Bulk Erase (BE) instruction.
This is useful, for example, when storing a fast stream of data, having first performed
the erase cycle when time was available
when the designer knows that the only changes involve resetting bits to 0 that are still
set to 1. When this method is possible, it has the additional advantage of minimizing the
number of unnecessary erase operations, and the extra stress incurred by each page.
●
●
●
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted Bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few Bytes (see
Page Program (PP)
and
Table 22: AC characteristics (50 MHz operation, T9HX (0.11μm) process)
).
4.4
Polling during a Write, Program or Erase cycle
A further improvement in the write, program or erase time can be achieved by not waiting for
the worst case delay (t
PW
, t
PP
, t
PE
, t
BE
, t
W
or t
SE
). The Write In Progress (WIP) bit is
provided in the Status Register so that the application program can monitor its value, polling
it to establish when the previous cycle is complete.
4.5
Reset
An internal Power-On Reset circuit helps protect against inadvertent data writes. Addition
protection is provided by driving Reset (Reset) Low during the Power-on process, and only
driving it High when V
CC
has reached the correct voltage level, V
CC
(min).
4.6
Active Power, Standby Power and Deep Power-Down modes
When Chip Select (S) is Low, the device is selected, and in the Active Power mode.
When Chip Select (S) is High, the device is deselected, but could remain in the Active Power
mode until all internal cycles have completed (Program, Erase, Write). The device then goes
in to the Standby Power mode. The device consumption drops to I
CC1
.
The Deep Power-down mode is entered when the specific instruction (the Deep Power-
down (DP) instruction) is executed. The device consumption drops further to I
CC2
. The
device remains in this mode until the Release from Deep Power-down instruction is
executed.
All other instructions are ignored while the device is in the Deep Power-down mode. This
can be used as an extra software protection mechanism, when the device is not in active
use, to protect the device from inadvertent Write, Program or Erase instructions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE10-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20_07 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE10-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE10-VMP6TG | 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| M25PE10-VMP6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE16 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
| M25PE16-VMP6G | 功能描述:閃存 16 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。