參數(shù)資料
型號： M25PE10-VMP6G
廠商： 意法半導體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁數(shù)： 12/60頁
文件大小： 310K
代理商： M25PE10-VMP6G
Operating features
M25PE20, M25PE10
12/60
4
Operating features
4.1
Sharing the overhead of modifying data
To write or program one (or more) data Bytes, two instructions are required: Write Enable
(WREN), which is one Byte, and a Page Write (PW) or Page Program (PP) sequence, which
consists of four Bytes plus data. This is followed by the internal cycle (of duration t
PW
or t
PP
).
To share this overhead, the Page Write (PW) or Page Program (PP) instruction allows up to
256 Bytes to be programmed (changing bits from 1 to 0) or written (changing bits to 0 or 1)
at a time, provided that they lie in consecutive addresses on the same page of memory.
4.2
An easy way to modify data
The Page Write (PW) instruction provides a convenient way of modifying data (up to 256
contiguous Bytes at a time), and simply requires the start address, and the new data in the
instruction sequence.
The Page Write (PW) instruction is entered by driving Chip Select (S) Low, and then
transmitting the instruction Byte, three address Bytes (A23-A0) and at least one data Byte,
and then driving Chip Select (S) High. While Chip Select (S) is being held Low, the data
Bytes are written to the data buffer, starting at the address given in the third address Byte
(A7-A0). When Chip Select (S) is driven High, the Write cycle starts. The remaining,
unchanged, Bytes of the data buffer are automatically loaded with the values of the
corresponding Bytes of the addressed memory page. The addressed memory page then
automatically put into an Erase cycle. Finally, the addressed memory page is programmed
with the contents of the data buffer.
All of this buffer management is handled internally, and is transparent to the user. The user
is given the facility of being able to alter the contents of the memory on a Byte-by-Byte basis.
For optimized timings, it is recommended to use the Page Write (PW) instruction to write all
consecutive targeted Bytes in a single sequence versus using several Page Write (PW)
sequences with each containing only a few Bytes (see
Page Write (PW)
and
Table 22: AC
characteristics (50 MHz operation, T9HX (0.11μm) process)
).
相關PDF資料
PDF描述
M25PE10-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20_07 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
M25PE10-VMP6P 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE10-VMP6TG 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
M25PE10-VMP6TP 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE16 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
M25PE16-VMP6G 功能描述:閃存 16 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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