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參數(shù)資料
| 型號(hào)： | M25P40 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 49/51頁 |
| 文件大?。?/td> | 398K |
| 代理商： | M25P40 |
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M25P40
Revision history
49/51
13
Revision history
Table 24.
Document Revision History
Date
Revision
Changes
12-Apr-2001
1.0
Document written
25-May-2001
1.1
Serial Paged Flash Memory renamed as Serial Flash Memory
11-Sep-2001
1.2
Changes to text: Signal Description/Chip Select; Hold Condition/1st para;
Protection modes; Release from Power-down and Read Electronic
Signature (RES); Power-up
Repositioning of several tables and illustrations without changing their
contents
Power-up timing illustration; SO8W package removed
Changes to tables: Abs Max Ratings/V
IO
; DC Characteristics/V
IL
16-Jan-2002
1.3
FAST_READ instruction added. Document revised with new timings, V
WI
,
I
CC3
and clock slew rate. Descriptions of Polling, Hold Condition, Page
Programming, Release for Deep Power-down made more precise. Value
of t
W
(max) modified.
12-Sep-2002
1.4
Clarification of descriptions of entering Standby Power mode from Deep
Power-down mode, and of terminating an instruction sequence or data-
out sequence.
VFQFPN8 package (MLP8) added. Document promoted to Preliminary
Data.
13-Dec-2002
1.5
Typical Page Program time improved. Deep Power-down current
changed. Write Protect setup and hold times specified, for applications
that switch Write Protect to exit the Hardware Protection mode
immediately before a WRSR, and to enter the Hardware Protection mode
again immediately after.
12-Jun-2003
1.6
Document promoted from Preliminary Data to full Datasheet
24-Nov-2003
2.0
Table of contents, warning about exposed paddle on MLP8, and Pb-free
options added.
40MHz AC Characteristics table included as well as 25MHz. I
CC3
(max),
t
SE
(typ) and t
BE
(typ) values improved. Change of naming for VDFPN8
package
12-Mar-2004
3.0
Automotive range added. Soldering temperature information clarified for
RoHS compliant devices
05-Aug-2004
4.0
Device Grade information clarified. Data-retention measurement
temperature corrected. Details of how to find the date of marking added.
03-Jan-2005
5.0
Small text changes. Notes 2 and 3 removed from
Table 23: Ordering
Information Scheme
.
End timing line of t
SHQZ
modified in
Figure 25: Output Timing
.
01-Aug-2005
6.0
Updated Page Program (PP) instructions in
Page Programming
,
Page
Program (PP)
,
Instruction Times (Device Grade 6)
and
Instruction Times
(Device Grade 3)
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE10-VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40_12 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron M25P40 Serial Flash Embedded Memory |
| M25P40-VMB3TPB | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25P40-VMB3TPB TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8UFDFPN |
| M25P40-VMB6TPB | 制造商:Micron Technology Inc 功能描述:4MBIT SPI NOR FLASH 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Cut TR (SOS) 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Tape and Reel 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin UFDFPN EP T/R |
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