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參數(shù)資料
| 型號(hào)： | M25P40 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 42/51頁 |
| 文件大?。?/td> | 398K |
| 代理商： | M25P40 |
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DC and AC parameters
M25P40
42/51
Table 19.
AC Characteristics (40MHz Operation, Device Grade 6)
40MHz available for products marked since week 20 of 2004, only
(1)
Test conditions specified in
Table 10
and
Table 17
1.
Details of how to find the date of marking are given in Application Note,
AN1995
.
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
f
C
f
C
Clock Frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, RDSR, WRSR
D.C.
40
MHz
f
R
Clock Frequency for READ instructions
D.C.
20
MHz
t
CH(2)
t
CL(2)
t
CLCH(3)
t
CHCL(3)
t
SLCH
t
CHSL
t
DVCH
t
CHDX
t
CHSH
t
SHCH
t
SHSL
t
SHQZ(3)
t
CLQV
t
CLQX
t
HLCH
t
CHHH
t
HHCH
t
CHHL
t
HHQX(3)
t
HLQZ(3)
t
WHSL(5)
t
SHWL(5)
t
DP(3)
2.
t
CH
+ t
CL
must be greater than or equal to 1/ f
C
Value guaranteed by characterization, not 100% tested in production.
t
CLH
t
CLL
Clock High Time
11
ns
Clock Low Time
Clock Rise Time
(4)
(peak to peak)
Clock Fall Time
(4)
(peak to peak)
11
ns
3.
4.
Expressed as a slew-rate.
0.1
V/ns
0.1
V/ns
t
CSS
S Active Setup Time (relative to C)
5
ns
S Not Active Hold Time (relative to C)
5
ns
t
DSU
t
DH
Data In Setup Time
2
ns
Data In Hold Time
5
ns
S Active Hold Time (relative to C)
5
ns
S Not Active Setup Time (relative to C)
5
ns
t
CSH
t
DIS
t
V
t
HO
S Deselect Time
100
ns
Output Disable Time
9
ns
Clock Low to Output Valid
9
ns
Output Hold Time
0
ns
HOLD Setup Time (relative to C)
5
ns
HOLD Hold Time (relative to C)
5
ns
HOLD Setup Time (relative to C)
5
ns
HOLD Hold Time (relative to C)
5
ns
t
LZ
t
HZ
HOLD to Output Low-Z
9
ns
HOLD to Output High-Z
9
ns
5.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
Write Protect Setup Time
20
ns
Write Protect Hold Time
100
ns
S High to Deep Power-down Mode
3
μs
t
RES1(3)
S High to Standby Power mode without
Electronic Signature Read
3 or 30
(6)
6.
It is 30μs in devices produced with the “X” process technology. Details of how to find the process letter on
the device marking are given in the Application note AN1995.
μs
t
RES2(3)
S High to Standby Power mode with Electronic
Signature Read
1.8 or 30
(6)
μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40_12 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron M25P40 Serial Flash Embedded Memory |
| M25P40-VMB3TPB | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25P40-VMB3TPB TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8UFDFPN |
| M25P40-VMB6TPB | 制造商:Micron Technology Inc 功能描述:4MBIT SPI NOR FLASH 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Cut TR (SOS) 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Tape and Reel 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin UFDFPN EP T/R |
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